Datasheet > FSS130D

FSS130D

更新时间： 2024-11-22 22:32:11

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	48K
描述
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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FSS130D 数据手册

FSS130D, FSS130R

11A, 100V, 0.210 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

June 1998

Features

Description

• 11A, 100V, r

• Total Dose

= 0.210Ω

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

DS(ON)

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space environ-

ments. The dose rate and neutron tolerance necessary for

military applications have not been sacriﬁced.

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSS130D1

FSS130D3

FSS130R1

FSS130R3

FSS130R4

10K

Symbol

100K

Commercial

TXV

Space

Formerly available as type TA17636.

Package

TO-257AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4059.2

3-71

12 3 4 5 6 7 8

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与FSS130D相关器件

型号	品牌	获取价格	描述	数据表
FSS130D1	INTERSIL	获取价格	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS130D3	INTERSIL	获取价格	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS130D4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 11A I(D) \| TO-257AA
FSS130R	INTERSIL	获取价格	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS130R1	INTERSIL	获取价格	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS130R3	INTERSIL	获取价格	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS130R4	INTERSIL	获取价格	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSS131	SANYO	获取价格	Load Switching Applications
FSS132	SANYO	获取价格	Load Switching Applications
FSS133	SANYO	获取价格	Load Switching Applications

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