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FSPS234D1

更新时间： 2024-09-28 20:27:51
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 81K
描述
11A, 250V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

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FSPS234D1 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.3Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.22 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-257AA
JESD-30 代码：S-MSFM-P3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：METAL封装形状：SQUARE
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：32 A认证状态：Not Qualified
表面贴装：NO端子形式：PIN/PEG
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FSPS234D1 数据手册

 浏览型号FSPS234D1的Datasheet PDF文件第2页浏览型号FSPS234D1的Datasheet PDF文件第3页浏览型号FSPS234D1的Datasheet PDF文件第4页浏览型号FSPS234D1的Datasheet PDF文件第5页浏览型号FSPS234D1的Datasheet PDF文件第6页浏览型号FSPS234D1的Datasheet PDF文件第7页 
FSPS234R, FSPS234F  
TM  
Data Sheet  
June 2000  
File Number 4877  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 11A, 250V, r  
• UIS Rated  
• Total Dose  
= 0.220Ω  
DS(ON)  
Intersil Star*Power™ Rad Hard  
MOSFETs have been specifically  
TM  
developed for high performance  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
- Rated to 300K RAD (Si)  
system designer both extremely low r  
and Gate  
DS(ON)  
• Single Event  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to 300K  
RADs while maintaining the guaranteed performance for  
Single Event Effects (SEE) which the Intersil FS families  
have always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
The Intersil portfolio of Star*Power FETs includes a family of  
devices in various voltage, current and package styles. The  
Star*Power family consists of Star*Power and Star*Power  
Gold products. Star*Power FETs are optimized for total dose  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
- 4.0nA Per-RAD (Si)/s Typically  
and r  
performance while exhibiting SEE capability at  
DS(ON)  
• Neutron  
full rated voltage up to an LET of 37. Star*Power Gold FETs  
have been optimized for SEE and Gate Charge providing  
SEE performance to 80% of the rated voltage for an LET of  
82 with extremely low gate charge characteristics.  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Symbol  
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
D
G
S
Packaging  
TO-257AA  
S
D
G
Reliability screening is available as either TXV or Space  
equivalent of MIL-PRF-19500.  
Formerly available as type TA45216W.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering Samples FSPS234D1  
CAUTION: Beryllia Warning per MIL-PRF-19500  
refer to package specifications.  
100K  
100K  
300K  
300K  
TXV  
Space  
TXV  
FSPS234R3  
FSPS234R4  
FSPS234F3  
FSPS234F4  
Space  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
Star*Power™ is a trademark of Intersil Corporation.  
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
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FSPS234F3 RENESAS

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 		11A, 250V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
FSPS234F4 RENESAS

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 		11A, 250V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
FSPS234R3 RENESAS

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 		11A, 250V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
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 		11A, 250V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
FSPYC160D1 ETC

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FSPYC160F3 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT
FSPYC160F4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT
FSPYC160R3 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT
FSPYC160R4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | SMT
FSPYC164D1 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 70A I(D) | SMT

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