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FSPS134F4

更新时间： 2024-11-14 23:52:59
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页数 文件大小 规格书
7页 124K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) | TO-257AA

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FSPS134F4 数据手册

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FSPS134R, FSPS134F  
Data Sheet  
December 2001  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 16A (Current Limited by Package), 150V, r  
= 0.094Ω  
DS(ON)  
Fairchild Star*Power™ Rad Hard  
MOSFETs have been specifically  
• UIS Rated  
TM  
• Total Dose  
developed for high performance  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
- Meets Pre-Rad Specifications to 100 krad (Si)  
- Rated to 300 krad (Si)  
system designer both extremely low r  
and Gate  
• Single Event  
DS(ON)  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to 300 krads  
while maintaining the guaranteed performance for Single  
Event Effects (SEE) which the Fairchild FS families have  
always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
• Dose Rate  
- Typically Survives 3E9 Rad (Si)/s at 80% BV  
DSS  
The Fairchild portfolio of Star*Power FETs includes a family  
of devices in various voltage, current and package styles.  
The Star*Power family consists of Star*Power and  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
- 2nA Per-Rad (Si)/s Typically  
Star*Power Gold products. Star*Power FETs are optimized  
for total dose and r  
performance while exhibiting SEE  
• Neutron  
DS(ON)  
capability at full rated voltage up to an LET of 37. Star*Power  
Gold FETs have been optimized for SEE and Gate Charge  
providing SEE performance to 80% of the rated voltage for  
an LET of 82 with extremely low gate charge characteristics.  
- Maintain Pre-Rad Specifications  
2
for 1E13 Neutrons/cm  
2
- Usable to 1E14 Neutrons/cm  
Symbol  
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
D
G
S
Packaging  
TO-257AA  
Reliability screening is available as either TXV or Space  
equivalent of MIL-PRF-19500.  
S
D
G
Formerly available as type TA45214W.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering Samples FSPS134D1  
100K  
100K  
300K  
300K  
TXV  
Space  
TXV  
FSPS134R3  
FSPS134R4  
FSPS134F3  
FSPS134F4  
CAUTION: Beryllia Warning per MIL-PRF-19500  
refer to package specifications.  
Space  
©2001 Fairchild Semiconductor Corporation  
FSPS134R, FSPS134F Rev. B  
1234567

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FSPS134R3 INFINEON

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 		Power Field-Effect Transistor, 16A I(D), 150V, 0.094ohm, 1-Element, N-Channel, Silicon, Me
FSPS134R4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) | TO-257AA
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FSPS230F3 INTERSIL

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 		Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPS230F4 INTERSIL

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 		Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPS230R INTERSIL

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 		Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPS230R3 INTERSIL

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 		Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPS230R4 INTERSIL

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 		Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPS234D1 RENESAS

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 		11A, 250V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

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