Datasheet > FSPJ260R4

FSPJ260R4

更新时间： 2024-09-27 20:26:23

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
9页	194K
描述
Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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FSPJ260R4 数据手册

FSPJ260R, FSPJ260F

Data Sheet

June 2001

File Number 4879

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 55A, 200V, r

• UIS Rated

• Total Dose

= 0.032Ω

DS(ON)

Fairchild Star*Power™ Rad Hard

MOSFETs have been specifically

developed for high performance

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

- Meets Pre-RAD Specifications to 100K RAD (Si)

- Rated to 300K RAD (Si)

system designer both extremely low r

and Gate

DS(ON)

• Single Event

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300K

RADs while maintaining the guaranteed performance for

Single Event Effects (SEE) which the Fairchild FS families

have always featured.

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 100% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

The Fairchild portfolio of Star*Power FETs includes a family

of devices in various voltage, current and package styles.

The Star*Power family consists of Star*Power and

- Typically Survives 2E12 if Current Limited to I

• Photo Current

Star*Power Gold products. Star*Power FETs are optimized

- 17nA Per-RAD (Si)/s Typically

for total dose and r

performance while exhibiting SEE

DS(ON)

• Neutron

capability at full rated voltage up to an LET of 37.

Star*Power Gold FETs have been optimized for SEE and

Gate Charge providing SEE performance to 80% of the

rated voltage for an LET of 82 with extremely low gate

charge characteristics.

- Maintain Pre-RAD Specifications

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Packaging

TO-254AA

Reliability screening is available as either TXV or Space

equivalent of MIL-PRF-19500.

Formerly available as type TA45211W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering Samples FSPJ260D1

100K

300K

TXV

Space

TXV

FSPJ260R3

FSPJ260R4

FSPJ260F3

FSPJ260F4

CAUTION: Beryllia Warning per MIL-PRF-19500

refer to package specifications.

Space

FSPJ260R, FSPJ260F Rev. A2

12 3 4 5 6 7...9

中文翻译

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与FSPJ260R4相关器件

型号	品牌	获取价格	描述	数据表
FSPJ264D1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA
FSPJ264F3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA
FSPJ264F4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA
FSPJ264R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA
FSPJ264R4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA
FSPL130D1	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
FSPL130F3	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
FSPL130F4	RENESAS	获取价格	FSPL130F4
FSPL130F4	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
FSPL130R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 12A I(D) \| TO-205AF

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