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FSPL230R4

更新时间： 2024-11-15 20:31:11
品牌 Logo 应用领域
瑞萨 - RENESAS 开关脉冲晶体管
页数 文件大小 规格书
8页 80K
描述
9A, 200V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN-3

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FSPL230R4 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BCY包装说明：CYLINDRICAL, O-MBCY-W3
针数：4Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.8
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：9 A
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.17 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-205AF
JESD-30 代码：O-MBCY-W3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：METAL封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：10 W
最大脉冲漏极电流 (IDM)：29 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FSPL230R4 数据手册

 浏览型号FSPL230R4的Datasheet PDF文件第2页浏览型号FSPL230R4的Datasheet PDF文件第3页浏览型号FSPL230R4的Datasheet PDF文件第4页浏览型号FSPL230R4的Datasheet PDF文件第5页浏览型号FSPL230R4的Datasheet PDF文件第6页浏览型号FSPL230R4的Datasheet PDF文件第7页 
FSPL230R, FSPL230F  
TM  
Data Sheet  
June 2000  
File Number 4865  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 9A, 200V, r  
• UIS Rated  
• Total Dose  
= 0.170Ω  
DS(ON)  
Intersil Star*Power Rad Hard  
MOSFETs have been specifically  
TM  
developed for high performance  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
- Rated to 300K RAD (Si)  
system designer both extremely low r  
and Gate  
DS(ON)  
• Single Event  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to 300K  
RADs while maintaining the guaranteed performance for  
Single Event Effects (SEE) which the Intersil FS families  
have always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
The Intersil portfolio of Star*Power FETs includes a family of  
devices in various voltage, current and package styles. The  
Star*Power family consists of Star*Power and Star*Power  
Gold products. Star*Power FETS are optimized for total dose  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
- 3.0nA Per-RAD (Si)/s Typically  
and r  
performance while exhibiting SEE capability at  
DS(ON)  
• Neutron  
full rated voltage up to an LET of 37. Star*Power Gold FETs  
have been optimized for SEE and Gate Charge providing  
SEE performance to 80% of the rated voltage for an LET of  
82 with extremely low gate charge characteristics.  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Symbol  
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
D
G
S
Packaging  
TO-205AF  
Reliability screening is available as either TXV or Space  
equivalent of MIL-S-19500.  
Formerly available as type TA45210W.  
Ordering Information  
G
D
S
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering samples FSPL230D1  
100K  
100K  
300K  
300K  
TXV  
FSPL230R3  
FSPL230R4  
FSPL230F3  
FSPL230F4  
Space  
TXV  
Space  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
4-1  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
Star*Power™ is a trademark of Intersil Corporation.  
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与FSPL230R4相关器件

型号 品牌 获取价格 描述 数据表
FSPL234D1 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF
FSPL234F3 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF
FSPL234F4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF
FSPL234R3 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF
FSPL234R4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF
FSPS130D1 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-257AA
FSPS130F3 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-257AA
FSPS130F4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-257AA
FSPS130R3 FAIRCHILD

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 		Power Field-Effect Transistor, 16A I(D), 100V, 0.049ohm, 1-Element, N-Channel, Silicon, Me
FSPS130R4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-257AA

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