生命周期: | Transferred | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.32 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.075 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 48 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FSPL130F3 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Me | |
FSPL130F4 | RENESAS |
获取价格 |
FSPL130F4 | |
FSPL130F4 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Me | |
FSPL130R3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF | |
FSPL130R4 | RENESAS |
获取价格 |
FSPL130R4 | |
FSPL134D1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Met | |
FSPL134F3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF | |
FSPL134F4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF | |
FSPL134R3 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Met | |
FSPL134R4 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Met |