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FSPL230F4 PDF预览

FSPL230F4

更新时间: 2024-11-14 22:32:11
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 84K
描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

FSPL230F4 数据手册

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FSPL230R, FSPL230F  
TM  
Data Sheet  
June 2000  
File Number 4865  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 9A, 200V, r  
• UIS Rated  
Total Dose  
= 0.170  
DS(ON)  
Intersil Star*Power Rad Hard  
MOSFETs have been specifically  
TM  
developed for high performance  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
- Rated to 300K RAD (Si)  
system designer both extremely low r  
and Gate  
DS(ON)  
• Single Event  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to 300K  
RADs while maintaining the guaranteed performance for  
Single Event Effects (SEE) which the Intersil FS families  
have always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
The Intersil portfolio of Star*Power FETs includes a family of  
devices in various voltage, current and package styles. The  
Star*Power family consists of Star*Power and Star*Power  
Gold products. Star*Power FETS are optimized for total dose  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
- 3.0nA Per-RAD (Si)/s Typically  
and r  
performance while exhibiting SEE capability at  
DS(ON)  
• Neutron  
full rated voltage up to an LET of 37. Star*Power Gold FETs  
have been optimized for SEE and Gate Charge providing  
SEE performance to 80% of the rated voltage for an LET of  
82 with extremely low gate charge characteristics.  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Symbol  
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
D
G
S
Packaging  
TO-205AF  
Reliability screening is available as either TXV or Space  
equivalent of MIL-S-19500.  
Formerly available as type TA45210W.  
Ordering Information  
G
D
S
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering samples FSPL230D1  
100K  
100K  
300K  
300K  
TXV  
FSPL230R3  
FSPL230R4  
FSPL230F3  
FSPL230F4  
Space  
TXV  
Space  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
4-1  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
Star*Power™ is a trademark of Intersil Corporation.  

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