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FSPL130F4

更新时间： 2024-09-27 21:13:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 87K
描述
Power Field-Effect Transistor, 12A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3

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FSPL130F4 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BCY包装说明：CYLINDRICAL, O-MBCY-W3
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.79
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：12 A最大漏极电流 (ID)：12 A
最大漏源导通电阻：0.075 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-205AFJESD-30 代码：O-MBCY-W3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：METAL
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：10 W最大脉冲漏极电流 (IDM)：48 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FSPL130F4 数据手册

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FSPL130R, FSPL130F  
Data Sheet  
December 2001  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 12A (Current Limited by Package), 100V, r  
= 0.075Ω  
DS(ON)  
Fairchild Star*Power Rad Hard  
MOSFETs have been specifically  
• UIS Rated  
TM  
• Total Dose  
developed for high performance  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
- Meets Pre-Rad Specifications to 100 krad (Si)  
- Rated to 300 krad (Si)  
system designer both extremely low r  
and Gate  
DS(ON)  
• Single Event  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to 300 krads  
while maintaining the guaranteed performance for Single  
Event Effects (SEE) which the Fairchild FS families have  
always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 100% of Rated Breakdown and  
of 5V Off-Bias  
DS  
V
GS  
• Dose Rate  
- Typically Survives 3E9 rad (Si)/s at 80% BV  
DSS  
The Fairchild portfolio of Star*Power FETs includes a family  
of devices in various voltage, current and package styles.  
The Star*Power family consists of Star*Power and  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
Star*Power Gold products. Star*Power FETs are optimized  
- 1.5nA Per-rad (Si)/s Typically  
for total dose and r  
performance while exhibiting SEE  
DS(ON)  
• Neutron  
capability at full rated voltage up to an LET of 37. Star*Power  
Gold FETs have been optimized for SEE and Gate Charge  
providing SEE performance to 80% of the rated voltage for  
an LET of 82 with extremely low gate charge characteristics.  
- Maintain Pre-Rad Specifications  
for 3E13 Neutrons/cm  
2
2
- Usable to 3E14 Neutrons/cm  
Symbol  
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
D
G
S
Packaging  
TO-205AF  
Reliability screening is available as either TXV or Space  
equivalent of MIL-PRF-19500.  
Formerly available as type TA45212W.  
Ordering Information  
G
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
D
S
10K  
Engineering Samples FSPL130D1  
100K  
100K  
300K  
300K  
TXV  
Space  
TXV  
FSPL130R3  
FSPL130R4  
FSPL130F3  
FSPL130F4  
Space  
©2001 Fairchild Semiconductor Corporation  
FSPL130R, FSPL130F Rev. B  
1234567

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FSPL130R3 ETC

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FSPL130R4 RENESAS

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FSPL134D1 INFINEON

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 		Power Field-Effect Transistor, 10A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
FSPL134F3 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
FSPL134F4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-205AF
FSPL134R3 INFINEON

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 		Power Field-Effect Transistor, 10A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
FSPL134R4 INFINEON

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 		Power Field-Effect Transistor, 10A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
FSPL230D1 INTERSIL

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 		Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPL230D1 RENESAS

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 		9A, 200V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL CAN-3
FSPL230F INTERSIL

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 		Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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