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FSPJ264D1

更新时间： 2024-09-26 23:52:59
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页数 文件大小 规格书
9页 185K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA

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FSPJ264D1 数据手册

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FSPJ264R, FSPJ264F  
Data Sheet  
June 2001  
File Number 4894  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 43A, 250V, r  
• UIS Rated  
• Total Dose  
= 0.047Ω  
DS(ON)  
itle  
PJ2  
R,  
Fairchild Star*Power™ Rad Hard  
MOSFETs have been specifically  
TM  
developed for high performance  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
- Rated to 300K RAD (Si)  
PJ2  
)
bje  
system designer both extremely low r  
and Gate  
DS(ON)  
• Single Event  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to 300K  
RADs while maintaining the guaranteed performance for  
Single Event Effects (SEE) which the Fairchild FS families  
have always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
dia  
V
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
GS  
de  
,
GR  
ista  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
The Fairchild portfolio of Star*Power FETs includes a family  
of devices in various voltage, current and package styles.  
The Star*Power family consists of Star*Power and  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
Star*Power Gold products. Star*Power FETs are optimized  
- 21nA Per-RAD (Si)/s Typically  
Cha  
l
wer  
SF  
)
for total dose and r  
performance while exhibiting SEE  
DS(ON)  
• Neutron  
capability at full rated voltage up to an LET of 37.  
Star*Power Gold FETs have been optimized for SEE and  
Gate Charge providing SEE performance to 80% of the  
rated voltage for an LET of 82 with extremely low gate  
charge characteristics.  
- Maintain Pre-RAD Specifications  
2
for 1E13 Neutrons/cm  
2
- Usable to 1E14 Neutrons/cm  
Symbol  
tho  
D
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
yw  
s
dia  
G
S
de  
,
GR  
ista  
Packaging  
TO-254AA  
G
S
Reliability screening is available as either TXV or Space  
equivalent of MIL-PRF-19500.  
Cha  
l
D
Formerly available as type TA45217W.  
wer  
SF  
,
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
rchi  
10K  
Engineering Samples FSPJ264D1  
por  
100K  
100K  
300K  
300K  
TXV  
Space  
TXV  
FSPJ264R3  
FSPJ264R4  
FSPJ264F3  
FSPJ264F4  
CAUTION: Beryllia Warning per MIL-PRF-19500  
refer to package specifications.  
Space  
©2001 Fairchild Semiconductor Corporation  
FSPJ264R, FSPJ264F Rev. A2  
1234567...9

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与FSPJ264D1相关器件

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FSPJ264F3 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA
FSPJ264F4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA
FSPJ264R3 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA
FSPJ264R4 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA
FSPL130D1 FAIRCHILD

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 		Power Field-Effect Transistor, 12A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
FSPL130F3 FAIRCHILD

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 		Power Field-Effect Transistor, 12A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
FSPL130F4 RENESAS

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 		FSPL130F4
FSPL130F4 FAIRCHILD

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 		Power Field-Effect Transistor, 12A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
FSPL130R3 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-205AF
FSPL130R4 RENESAS

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 		FSPL130R4

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