Datasheet > FSPJ164R4

FSPJ164R4

更新时间： 2024-09-26 23:52:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	108K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 68A I(D) \| TO-254AA

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FSPJ164R4 数据手册

FSPJ164R, FSPJ164F

Data Sheet

December 2001

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 68A, 150V, r

• UIS Rated

• Total Dose

= 0.022Ω

DS(ON)

Fairchild Star*Power Rad Hard

MOSFETs have been specifically

developed for high performance

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

- Meets Pre-Rad Specifications to 100 krad (Si)

- Rated to 300 krad (Si)

system designer both extremely low r

and Gate

• Single Event

DS(ON)

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300 krads

while maintaining the guaranteed performance for Single

Event Effects (SEE) which the Fairchild FS families have

always featured.

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 100% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 Rad (Si)/s at 80% BV

DSS

The Fairchild portfolio of Star*Power FETs includes a family

of devices in various voltage, current and package styles.

The Star*Power family consists of Star*Power and

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 14nA Per-Rad (Si)/s Typically

Star*Power Gold products. Star*Power FETs are optimized

for total dose and r

performance while exhibiting SEE

• Neutron

DS(ON)

capability at full rated voltage up to an LET of 37. Star*Power

Gold FETs have been optimized for SEE and Gate Charge

providing SEE performance to 80% of the rated voltage for

an LET of 82 with extremely low gate charge characteristics.

- Maintain Pre-Rad Specifications

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Packaging

TO-254AA

Reliability screening is available as either TXV or Space

equivalent of MIL-PRF-19500.

Formerly available as type TA45215W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering Samples FSPJ164D1

100K

300K

TXV

Space

TXV

FSPJ164R3

FSPJ164R4

FSPJ164F3

FSPJ164F4

CAUTION: Beryllia Warning per MIL-PRF-19500

refer to package specifications.

Space

FSPJ164R, FSPJ164F Rev. B

12 3 4 5 6 7

中文翻译

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与FSPJ164R4相关器件

型号	品牌	获取价格	描述	数据表
FSPJ260D1	INFINEON	获取价格	Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
FSPJ260F3	INFINEON	获取价格	Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
FSPJ260F4	INFINEON	获取价格	Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
FSPJ260R3	INFINEON	获取价格	Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
FSPJ260R4	INFINEON	获取价格	Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
FSPJ264D1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA
FSPJ264F3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA
FSPJ264F4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA
FSPJ264R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA
FSPJ264R4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 43A I(D) \| TO-254AA

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