Datasheet > FSPJ160R3

FSPJ160R3

更新时间： 2024-09-26 23:52:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	107K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 70A I(D) \| TO-254AA

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FSPJ160R3 数据手册

FSPJ160R, FSPJ160F

Data Sheet

December 2001

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 70A (Current Limited by Package), 100V, r

= 0.011Ω

DS(ON)

Fairchild Star*Power Rad Hard

MOSFETs have been specifically

• UIS Rated

• Total Dose

developed for high performance

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

- Meets Pre-RAD Specifications to 100 krad (Si)

- Rated to 300 krad (Si)

system designer both extremely low r

and Gate

DS(ON)

• Single Event

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300 krads

while maintaining the guaranteed performance for Single

Event Effects (SEE) which the Fairchild FS families have

always featured.

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 100% of Rated Breakdown and

of 5V Off-Bias

• Dose Rate

- Typically Survives 3E9 rad (Si)/s at 80% BV

DSS

The Fairchild portfolio of Star*Power FETs includes a family

of devices in various voltage, current and package styles.

The Star*Power family consists of Star*Power and

- Typically Survives 2E12 if Current Limited to I

• Photo Current

Star*Power Gold products. Star*Power FETs are optimized

- 9nA Per-rad (Si)/s Typically

for total dose and r

performance while exhibiting SEE

DS(ON)

• Neutron

capability at full rated voltage up to an LET of 37. Star*Power

Gold FETs have been optimized for SEE and Gate Charge

providing SEE performance to 80% of the rated voltage for

an LET of 82 with extremely low gate charge characteristics.

- Maintain Pre-RAD Specifications

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Symbol

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Packaging

TO-254AA

Reliability screening is available as either TXV or Space

equivalent of MIL-PRF-19500.

Formerly available as type TA45213W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering Samples FSPJ160D1

CAUTION: Beryllia Warning per MIL-PRF-19500

refer to package specifications.

100K

300K

TXV

Space

TXV

FSPJ160R3

FSPJ160R4

FSPJ160F3

FSPJ160F4

Space

FSPJ160R, FSPJ160F Rev. B

12 3 4 5 6 7

中文翻译

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与FSPJ160R3相关器件

型号	品牌	获取价格	描述	数据表
FSPJ160R4	FAIRCHILD	获取价格	Power Field-Effect Transistor, 70A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Me
FSPJ164D1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 68A I(D) \| TO-254AA
FSPJ164F3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 68A I(D) \| TO-254AA
FSPJ164F4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 68A I(D) \| TO-254AA
FSPJ164R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 68A I(D) \| TO-254AA
FSPJ164R4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 68A I(D) \| TO-254AA
FSPJ260D1	INFINEON	获取价格	Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
FSPJ260F3	INFINEON	获取价格	Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
FSPJ260F4	INFINEON	获取价格	Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Me
FSPJ260R3	INFINEON	获取价格	Power Field-Effect Transistor, 55A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Me

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