TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation
IGBT-Modul
IGBT-Module
FS500R17OE4D
IGBT,Wechselrichterꢀ/ꢀIGBT,Inverter
HöchstzulässigeꢀWerteꢀ/ꢀMaximumꢀRatedꢀValues
Kollektor-Emitter-Sperrspannung
Collector-emitterꢀvoltage
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1700
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
V
Kollektor-Dauergleichstrom
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 95°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
500
740
A
A
PeriodischerꢀKollektor-Spitzenstrom
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
1000
3000
+/-20
A
W
V
Gesamt-Verlustleistung
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterꢀpeakꢀvoltage
VGES
CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emitterꢀsaturationꢀvoltage
IC = 500 A, VGE = 15 V
IC = 500 A, VGE = 15 V
IC = 500 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,95 2,30
2,35
2,45
V
V
V
VCE sat
Gate-Schwellenspannung
Gateꢀthresholdꢀvoltage
IC = 20,0 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
5,2
5,8
5,10
1,5
6,4
V
µC
Ω
Gateladung
Gateꢀcharge
InternerꢀGatewiderstand
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
Eingangskapazität
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
40,0
1,30
nF
nF
Rückwirkungskapazität
Reverseꢀtransferꢀcapacitance
Kollektor-Emitter-Reststrom
Collector-emitterꢀcut-offꢀcurrent
3,0 mA
400 nA
Gate-Emitter-Reststrom
Gate-emitterꢀleakageꢀcurrent
Einschaltverzögerungszeit,ꢀinduktiveꢀLast
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 500 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,19
0,23
0,24
µs
µs
µs
Anstiegszeit,ꢀinduktiveꢀLast
Riseꢀtime,ꢀinductiveꢀload
IC = 500 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,08
0,08
0,09
µs
µs
µs
tr
td off
tf
Abschaltverzögerungszeit,ꢀinduktiveꢀLast
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 500 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,70
0,85
0,90
µs
µs
µs
Fallzeit,ꢀinduktiveꢀLast
Fallꢀtime,ꢀinductiveꢀload
IC = 500 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,11
0,16
0,18
µs
µs
µs
EinschaltverlustenergieꢀproꢀPuls
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 500 A, VCE = 900 V, LS = 35 nH
VGE = ±15 V, di/dt = 6200 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,8 Ω
Tvj = 25°C
125
165
175
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
AbschaltverlustenergieꢀproꢀPuls
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 500 A, VCE = 900 V, LS = 35 nH
VGE = ±15 V, du/dt = 3100 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,8 Ω
Tvj = 25°C
94,0
155
175
mJ
mJ
mJ
Tvj = 150°C
Kurzschlußverhalten
SCꢀdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
tP ≤ 10 µs, Tvj = 150°C
2100
A
Wärmewiderstand,ꢀChipꢀbisꢀGehäuse
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
proꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
RthCH
Tvj op
0,05 K/W
Wärmewiderstand,ꢀGehäuseꢀbisꢀKühlkörper proꢀIGBTꢀ/ꢀperꢀIGBT
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,036
K/W
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
TemperaturꢀimꢀSchaltbetrieb
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
°C
preparedꢀby:ꢀCU
approvedꢀby:ꢀJDB
dateꢀofꢀpublication:ꢀ2014-05-12
revision:ꢀ3.0
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