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FS50KM-06-A8 PDF预览

FS50KM-06-A8

更新时间: 2024-02-04 18:31:58
品牌 Logo 应用领域
瑞萨 - RENESAS 开关
页数 文件大小 规格书
7页 174K
描述
High-Speed Switching Use Nch Power MOS FET

FS50KM-06-A8 技术参数

生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:TO-220FN, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.33外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):50 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS50KM-06-A8 数据手册

 浏览型号FS50KM-06-A8的Datasheet PDF文件第2页浏览型号FS50KM-06-A8的Datasheet PDF文件第3页浏览型号FS50KM-06-A8的Datasheet PDF文件第4页浏览型号FS50KM-06-A8的Datasheet PDF文件第5页浏览型号FS50KM-06-A8的Datasheet PDF文件第6页浏览型号FS50KM-06-A8的Datasheet PDF文件第7页 
FS50KM-06  
High-Speed Switching Use  
Nch Power MOS FET  
REJ03G1417-0200  
(Previous: MEJ02G0092-0101)  
Rev.2.00  
Aug 07, 2006  
Features  
Drive voltage : 10 V  
DSS : 60 V  
DS(ON) (max) : 22 mΩ  
V
r
ID : 50 A  
Integrated Fast Recovery Diode (TYP.) : 65 ns  
Viso : 2000 V  
Outline  
RENESAS Package code: PRSS0003AB-A  
(Package name: TO-220FN)  
1. Gate  
2. Drain  
3. Source  
1
3
Applications  
Motor control, Lamp contrDC-DC converters, etc.  
Maximum Ratings  
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
Conditions  
VGS = 0 V  
60  
V
V
±20  
VDS = 0 V  
50  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
200  
A
IDA  
50  
50  
A
L = 100 µH  
IS  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Isolation voltage  
ISM  
200  
A
PD  
30  
W
°C  
°C  
V
Tch  
Tstg  
Viso  
– 55 to +150  
– 55 to +150  
2000  
AC for 1 minute,  
Terminal to case  
Mass  
2.0  
g
Typical value  
Rev.2.00 Aug 07, 2006 page 1 of 6  

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