Datasheet > FS20R06VE3_B2

FS20R06VE3_B2

更新时间： 2024-11-11 10:24:35

品牌	Logo	应用领域
EUPEC		双极性晶体管
页数	文件大小	规格书
8页	287K
描述
IGBT-modules

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FS20R06VE3_B2 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FS20R06VE3_B2

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

600

Kollektor-Dauergleichstrom

DC-collector current

T† = 75°C, TÝÎ = 175°C

T† = 25°C, TÝÎ = 175°C

I† ÒÓÑ

I†

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 175°C

71,5

+/-20

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 20 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C V†Š ÙÈÚ

TÝÎ = 150°C

1,55 2,00

1,70

1,80

Gate-Schwellenspannung

gate threshold voltage

I† = 0,30 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

V•ŠÚÌ

Q•

4,9

5,8

0,20

0,0

6,5

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

1,10

0,034

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

1,0

Gate-Emitter Reststrom

gate-emitter leakage current

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 20 A, V†Š = 300 V

V•Š = ±15 V

R•ÓÒ = 18 Â

TÝÎ = 25°C

tÁ ÓÒ

0,015

µs

TÝÎ = 125°C

TÝÎ = 150°C

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 20 A, V†Š = 300 V

V•Š = ±15 V

R•ÓÒ = 18 Â

TÝÎ = 25°C

tØ

0,013

0,016

0,017

µs

TÝÎ = 125°C

TÝÎ = 150°C

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 20 A, V†Š = 300 V

V•Š = ±15 V

R•ÓËË = 18 Â

TÝÎ = 25°C

tÁ ÓËË

0,12

0,14

0,15

µs

TÝÎ = 125°C

TÝÎ = 150°C

Fallzeit (induktive Last)

fall time (inductive load)

I† = 20 A, V†Š = 300 V

V•Š = ±15 V

R•ÓËË = 18 Â

TÝÎ = 25°C

tË

0,07

0,095

0,10

µs

TÝÎ = 125°C

TÝÎ = 150°C

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 20 A, V†Š = 300 V

V•Š = ±15 V, L» = 60 nH

R•ÓÒ = 18 Â

TÝÎ = 25°C

TÝÎ = 125°C

TÝÎ = 150°C

0,32

0,44

0,49

EÓÒ

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 20 A, V†Š = 300 V

V•Š = ±15 V, L» = 60 nH

R•ÓËË = 18 Â

TÝÎ = 25°C

TÝÎ = 125°C

TÝÎ = 150°C

0,45

0,56

0,59

EÓËË

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 360 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

t« ù 8 µs, TÝÎ = 25°C

t« ù 6 µs, TÝÎ = 150°C

140

100

I»†

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

RÚÌ†™

1,90 2,10 K/W

0,85 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Peter Kanschat

approved by: Ralf Keggenhoff

date of publication: 2005-4-14

revision: 2.0

12 3 4 5 6 7 8

中文翻译

下载PDF

与FS20R06VE3_B2相关器件

型号	品牌	获取价格	描述	数据表
FS20R06VE3B2BOMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-15
FS20R06VE3BOMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-13
FS20R06W1E3	INFINEON	获取价格	EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
FS20R06W1E3_B11	INFINEON	获取价格	EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT /
FS20R06W1E3BOMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-22
FS-20SCBE100R0JE	VISHAY	获取价格	RES 100 OHM 20W 5% WW RAD
FS-20SCBE10R00JE	VISHAY	获取价格	RES 10 OHM 20W 5% WW RAD
FS-20SCBE1K000JE	VISHAY	获取价格	RES 1.0K OHM 20W 5% WW RAD
FS-20SCBE1R000JE	VISHAY	获取价格	RES 1.0 OHM 20W 5% WW RAD
FS-20SCBE250R0JE	VISHAY	获取价格	RES 250 OHM 20W 5% WW RAD

与FS20R06VE3_B2相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

20
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

5
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

5
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

FS20R06VE3_B2

FS20R06VE3_B2 数据手册

与FS20R06VE3_B2相关器件

与FS20R06VE3_B2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FS20R06VE3_B2

FS20R06VE3_B2 数据手册

与FS20R06VE3_B2相关器件

与FS20R06VE3_B2相关文章

您还可以找

您在本页遇到什么问题？