是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X15 | 针数: | 22 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.01 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 35 A |
集电极-发射极最大电压: | 600 V | 配置: | COMPLEX |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X15 |
元件数量: | 6 | 端子数量: | 15 |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 135 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 320 ns |
标称接通时间 (ton): | 57 ns | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FS20R06W1E3BOMA1 | INFINEON |
类似代替 |
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-22 | |
FS20R06W1E3_B11 | INFINEON |
类似代替 |
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS20R06W1E3_B11 | INFINEON |
获取价格 |
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / | |
FS20R06W1E3BOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-22 | |
FS-20SCBE100R0JE | VISHAY |
获取价格 |
RES 100 OHM 20W 5% WW RAD | |
FS-20SCBE10R00JE | VISHAY |
获取价格 |
RES 10 OHM 20W 5% WW RAD | |
FS-20SCBE1K000JE | VISHAY |
获取价格 |
RES 1.0K OHM 20W 5% WW RAD | |
FS-20SCBE1R000JE | VISHAY |
获取价格 |
RES 1.0 OHM 20W 5% WW RAD | |
FS-20SCBE250R0JE | VISHAY |
获取价格 |
RES 250 OHM 20W 5% WW RAD | |
FS-20SCBE25R00JE | VISHAY |
获取价格 |
RES 25 OHM 20W 5% WW RAD | |
FS-20SCBE2K500JE | VISHAY |
获取价格 |
RES 2.5K OHM 20W 5% WW RAD | |
FS-20SCBE500R0JE | VISHAY |
获取价格 |
RES 500 OHM 20W 5% WW RAD |