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FS20R06W1E3_B11 PDF预览

FS20R06W1E3_B11

更新时间: 2024-11-11 10:24:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制双极性晶体管PC局域网
页数 文件大小 规格书
9页 568K
描述
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

FS20R06W1E3_B11 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X18针数:22
Reach Compliance Code:compliant风险等级:5.02
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:422421Samacsys Pin Count:28
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Other
Samacsys Footprint Name:FS20R06W1E3_B11-3Samacsys Released Date:2020-05-01 16:05:52
Is Samacsys:N其他特性:UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):35 A
集电极-发射极最大电压:600 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X18
元件数量:6端子数量:18
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):135 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):320 ns
标称接通时间 (ton):57 nsVCEsat-Max:2 V
Base Number Matches:1

FS20R06W1E3_B11 数据手册

 浏览型号FS20R06W1E3_B11的Datasheet PDF文件第2页浏览型号FS20R06W1E3_B11的Datasheet PDF文件第3页浏览型号FS20R06W1E3_B11的Datasheet PDF文件第4页浏览型号FS20R06W1E3_B11的Datasheet PDF文件第5页浏览型号FS20R06W1E3_B11的Datasheet PDF文件第6页浏览型号FS20R06W1E3_B11的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FS20R06W1E3_B11  
EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC  
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC  
Vorläufige Daten / preliminary data  
ϑ
V†Š» = 600V  
I† ÒÓÑ = 20A / I†ç¢ = 40A  
Typische Anwendungen  
Typical Applications  
Klimaanlagen  
Motorantriebe  
Servoumrichter  
USV-Systeme  
Air Conditioning  
Motor Drives  
Servo Drives  
UPS Systems  
Elektrische Eigenschaften  
Electrical Features  
Niedrige Schaltverluste  
Niedriges V†ŠÙÈÚ  
Low Switching Losses  
Low V†ŠÙÈÚ  
Trench IGBT 3  
Trench IGBT 3  
V†ŠÙÈÚ mit positivem Temperaturkoeffizienten  
V†ŠÙÈÚ with positive Temperature Coefficient  
Mechanische Eigenschaften  
Mechanical Features  
AlèOé Substrat mit kleinem thermischen  
Widerstand  
AlèOé Substrate with Low Thermal Resistance  
Kompaktes Design  
Compact design  
PressFIT Verbindungstechnik  
PressFIT Contact Technology  
Robuste Montage durch integrierte  
Befestigungsklammern  
Rugged mounting due to integrated mounting  
clamps  
Module Label Code  
Barcode Code 128  
Content of the Code  
Digit  
Module Serial Number  
1 - 5  
Module Material Number  
Production Order Number  
Datecode (Production Year)  
Datecode (Production Week)  
6 - 11  
12 - 19  
20 - 21  
22 - 23  
DMX - Code  
prepared by: DK  
approved by: MB  
date of publication: 2010-08-09  
revision: 2.0  
material no: 34587  
UL approved (E83335)  
1

FS20R06W1E3_B11 替代型号

型号 品牌 替代类型 描述 数据表
FS20R06W1E3BOMA1 INFINEON

类似代替

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-22
FS20R06W1E3 INFINEON

类似代替

EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC

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