Datasheet > FQA6N90_F109

FQA6N90_F109

更新时间： 2025-09-18 19:02:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	761K
描述
元器件封装:TO-3P;

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数据手册

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FQA6N90_F109 数据手册

September 2007

QFET

FQA6N90_F109

900V N-Channel MOSFET

Features

Description

•

6.4A, 900V, R_DS(on)= 1.9Ω @V_GS= 10 V

Low gate charge ( typical 40 nC)

Low Crss ( typical 17pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

TO-3PN

FQA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FQA6N90_F109

Units

V_DSS

I_D

Drain-Source Voltage

900

6.4

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

4.0

(Note 1)

I_DM

Drain Current

25.6

± 30

715

V_GSS

E_AS

I_AR

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

6.4

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

19.8

4.0

V/ns

198

- Derate above 25°C

1.58

-55 to +150

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.63

Units

°C/W

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

Thermal Resistance, Junction-to-Ambient

FQA6N90_F109 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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