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FMB075

更新时间: 2024-10-28 22:40:55
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

FMB075 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.09
Is Samacsys:N最大集电极电流 (IC):10 A
基于收集器的最大容量:75 pF集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):10
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRFM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):140 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

FMB075 数据手册

  
FMB075  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .500 4L FLG  
DESCRIPTION:  
The ASI FMB075 is Designed for  
.112x45°  
L
A
Ø.125 NOM.  
FULL R  
C
FEATURES:  
·
B
E
·
· Omnigold™ Metalization System  
D
F
G
H
K
J
I
MAXIMUM RATINGS  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
10 A  
60 V  
IC  
.220 / 5.59  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
.125 / 3.18  
.125 / 3.18  
VCB  
VCE  
PDISS  
TJ  
.245 / 6.22  
.255 / 6.48  
.720 / 18.28  
.7.30 / 18.54  
35 V  
.970 / 24.64  
.495 / 12.57  
.003 / 0.08  
.090 / 2.29  
.150 / 3.81  
.980 / 24.89  
.505 / 12.83  
.007 / 0.18  
.110 / 2.79  
.175 / 4.45  
.280 / 7.11  
1.050 / 26.67  
140 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
1.5 OC/W  
J
K
L
.980 / 24.89  
TSTG  
qJC  
ORDER CODE: ASI10587  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
VE = 28 V  
35  
V
BVCER  
BVEBO  
ICES  
RBE = 10 W  
IC = 1.0 A  
60  
V
4.0  
V
5
mA  
---  
hFE  
VCE = 5.0 V  
10  
10  
100  
Cob  
VCB = 28 V  
VCC = 28 V  
f = 1.0 MHz  
f = 108 MHz  
75  
pF  
PG  
hC  
dB  
%
POUT = 75 W  
65  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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