5秒后页面跳转
FM580-B PDF预览

FM580-B

更新时间: 2024-09-15 22:40:55
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管光电二极管瞄准线功效
页数 文件大小 规格书
2页 83K
描述
Chip Schottky Barrier Diodes - Silicon epitaxial planer type

FM580-B 技术参数

生命周期:Contact Manufacturer包装说明:R-PDSO-F2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.64
Is Samacsys:N其他特性:LOW POWER LOSS
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:80 V
最大反向电流:500 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

FM580-B 数据手册

 浏览型号FM580-B的Datasheet PDF文件第2页 
Chip Schottky Barrier Diodes  
Formosa MS  
FM520-B THRU FM5100-B  
Silicon epitaxial planer type  
Features  
SMB  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-O Utilizing Flame  
RetardantEpoxy Molding Compound.  
0.213(5.4)  
0.197(5.0)  
0.016(0.4) Typ.  
For surface mounted applications.  
0.142(3.6)  
0.126(3.2)  
Exceeds environmental standards of MIL-S-19500 /  
228  
0.173(4.4)  
0.157(4.0)  
Low leakage current.  
0.075(1.9)  
0.067(1.7)  
0.040(1.0) Typ.  
0.040 (1.0) Typ.  
Mechanical data  
Dimensions in inches and (millimeters)  
Case : Molded plastic, JEDECDO-214AA  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by c athode band  
Mounting Position : Any  
Weight : 0.00878 ounce, 0.293 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
5.0  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
150  
A
IFSM  
o
VR = VRRM TA = 25 C  
0.5  
50  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 125 C  
o
Thermal resistance  
Junction to lead  
12  
C / w  
pF  
RqJL  
CJ  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
380  
o
-55  
+150  
C
TSTG  
Operating  
*1  
*2  
*3  
*4  
VRRM  
VRMS  
VR  
VF  
MARKING  
temperature  
SYMBOLS  
CODE  
o
( C)  
(V)  
(V)  
(V)  
(V)  
FM520-B  
FM530-B  
FM540-B  
FM550-B  
FM560-B  
FM580-B  
FM5100-B  
SS52  
SS53  
SS54  
SS55  
SS56  
SS58  
S510  
20  
30  
40  
50  
60  
80  
14  
21  
28  
35  
42  
56  
70  
20  
30  
40  
50  
60  
80  
100  
0.55  
-55 to +125  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
0.70  
-55 to +150  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
0.85  
100  

与FM580-B相关器件

型号 品牌 获取价格 描述 数据表
FM580B-HF-T RECTRON

获取价格

暂无描述
FM580B-T RECTRON

获取价格

Rectifier Diode,
FM580BV-T RECTRON

获取价格

暂无描述
FM580BV-W RECTRON

获取价格

Rectifier Diode,
FM580B-W RECTRON

获取价格

Rectifier Diode,
FM580-H FRONTIER

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 80V V(RRM), Silicon, DO-214AB, SMC, 2 P
FM580L RECTRON

获取价格

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 5.0 Ampere
FM580L-T RECTRON

获取价格

Rectifier Diode,
FM580-T FORMOSA

获取价格

Chip Schottky Barrier Diodes - Silicon epitaxial planer type
FM580-T1 PACELEADER

获取价格

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER