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FM28V020-TGTR PDF预览

FM28V020-TGTR

更新时间: 2024-10-02 12:46:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
16页 410K
描述
256Kbit Bytewide F-RAM Memory

FM28V020-TGTR 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TSOP1包装说明:TSOP1, TSSOP32,.56,20
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:1.41Is Samacsys:N
最长访问时间:140 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e3长度:11.8 mm
内存密度:262144 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8混合内存类型:N/A
湿度敏感等级:3功能数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.56,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):260电源:2.5/3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00015 A子类别:SRAMs
最大压摆率:0.008 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:8 mmBase Number Matches:1

FM28V020-TGTR 数据手册

 浏览型号FM28V020-TGTR的Datasheet PDF文件第2页浏览型号FM28V020-TGTR的Datasheet PDF文件第3页浏览型号FM28V020-TGTR的Datasheet PDF文件第4页浏览型号FM28V020-TGTR的Datasheet PDF文件第5页浏览型号FM28V020-TGTR的Datasheet PDF文件第6页浏览型号FM28V020-TGTR的Datasheet PDF文件第7页 
FM28V020  
256Kbit Bytewide F-RAM Memory  
Features  
SRAM Replacement  
256Kbit Ferroelectric Nonvolatile RAM  
Organized as 32K x 8  
JEDEC 32Kx8 SRAM pinout  
70 ns Access Time, 140 ns Cycle Time  
1014 Read/Write Cycles  
NoDelay™ Writes  
Page Mode Operation  
Low Power Operation  
2.0V 3.6V Power Supply  
Standby Current 90 A (typ)  
Active Current 5 mA (typ)  
Advanced High-Reliability Ferroelectric Process  
Superior to Battery-backed SRAM Modules  
No battery concerns  
Industry Standard Configurations  
Industrial Temperature -40 C to +85 C  
28-pin “Green”/RoHS SOIC (-SG)  
28-pin “Green”/RoHS TSOP (-T28G)  
32-pin “Green”/RoHS TSOP (-TG)  
Monolithic reliability  
True surface mount solution, no rework steps  
Superior for moisture, shock, and vibration  
Resistant to negative voltage undershoots  
General Description  
The FM28V020 is a 32K x 8 nonvolatile memory that  
reads and writes like a standard SRAM. A ferroelectric  
random access memory or F-RAM is nonvolatile,  
which means that data is retained after power is  
removed. It provides data retention for over 10 years  
while eliminating the reliability concerns, functional  
disadvantages, and system design complexities of  
battery-backed SRAM (BBSRAM). Fast write timing  
and virtually unlimited write endurance make F-RAM  
superior to other types of memory.  
replacement for standard SRAM. Read and write  
cycles may be triggered by /CE or simply by changing  
the address. The F-RAM memory is nonvolatile due to  
its unique ferroelectric memory process. These  
features make the FM28V020 ideal for nonvolatile  
memory applications requiring frequent or rapid writes  
in the form of an SRAM.  
The device is available in a 28-pin SOIC, 28-pin  
TSOP-I, or 32-pin TSOP-I surface mount package.  
Device specifications are guaranteed over the  
industrial temperature range -40°C to +85°C.  
In-system operation of the FM28V020 is very similar  
to other RAM devices and can be used as a drop-in  
Ordering Information  
FM28V020-SG  
28-pin “Green”/RoHS SOIC  
28-pin “Green”/RoHS SOIC, Tape & Reel  
28-pin “Green”/RoHS TSOP  
28-pin “Green”/RoHS TSOP, Tape & Reel  
32-pin “Green”/RoHS TSOP  
FM28V020-SGTR  
FM28V020-T28G  
FM28V020-T28GTR  
FM28V020-TG  
FM28V020-TGTR  
32-pin “Green”/RoHS TSOP, Tape & Reel  
This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s  
internal qualification testing and has reached production status.  
Cypress Semiconductor Corporation  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Document Number: 001-86204 Rev. *A  
Revised March 07, 2013  

FM28V020-TGTR 替代型号

型号 品牌 替代类型 描述 数据表
FM28V020-TG CYPRESS

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