Datasheet > FM28V202A-TG

FM28V202A-TG

更新时间： 2024-03-03 10:09:41

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
22页	497K
描述
铁电存储器 (F-RAM)

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FM28V202A-TG 数据手册

FM28V202A

2-Mbit (128 K × 16) F-RAM Memory

2-Mbit (128

K × 16) F-RAM Memory

■ Industrial temperature: –40 C to +85 C

Features

■ 44-pin thin small outline package (TSOP) Type II

■ 2-Mbit ferroelectric random access memory (F-RAM) logically

organized as 128 K × 16

■ Restriction of hazardous substances (RoHS) compliant

❐ Configurable as 256 K × 8 using UB and LB

❐ High-endurance 100 trillion (10¹⁴) read/writes

Functional Overview

❐ 151-year data retention (see the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Page mode operation to 30-ns cycle time

❐ Advanced high-reliability ferroelectric process

The FM28V202A is a 128 K × 16 nonvolatile memory that reads

and writes similar to a standard SRAM. A ferroelectric random

access memory or F-RAM is nonvolatile, which means that data

is retained after power is removed. It provides data retention for

over 151 years while eliminating the reliability concerns,

functional disadvantages, and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing and high

write endurance make the F-RAM superior to other types of

memory.

■ SRAM compatible

❐ Industry-standard 128 K × 16 SRAM pinout

❐ 60-ns access time, 90-ns cycle time

■ Advanced features

❐ Software-programmable block write-protect

The FM28V202A operation is similar to that of other RAM

devices and therefore, it can be used as a drop-in replacement

for a standard SRAM in a system. Read cycles may be triggered

by CE or simply by changing the address and write cycles may

be triggered by CE or WE. The F-RAM memory is nonvolatile

due to its unique ferroelectric memory process. These features

make the FM28V202A ideal for nonvolatile memory applications

requiring frequent or rapid writes.

■ Superior to battery-backed SRAM modules

❐ No battery concerns

❐ Monolithic reliability

❐ True surface mount solution, no rework steps

❐ Superior for moisture, shock, and vibration

■ Low power consumption

❐ Active current 7 mA (typ)

❐ Standby current 120 A (typ)

The device is available in a 400-mil, 44-pin TSOP-II surface

mount package. Device specifications are guaranteed over the

industrial temperature range –40 °C to +85 °C.

For a complete list of related documentation, click here.

■ Low-voltage operation: V_DD= 2.0 V to 3.6 V

Logic Block Diagram

16 K x 16 block

16-2

16-0

1-0

. . .

Column Decoder

15-0

Control

UB, LB

I/O Latch & Bus Driver

Logic

Cypress Semiconductor Corporation

Document Number: 001-90309 Rev. *G

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 20, 2017

12 3 4 5 6 7...22

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与FM28V202A-TG相关器件

型号	品牌	描述	获取价格	数据表
FM28V202A-TGTR	CYPRESS	Memory Circuit, 128KX16, CMOS, PDSO44, TSOP2-44	获取价格
FM28V202A-TGTR	INFINEON	铁电存储器 (F-RAM)	获取价格
FM28V202-TG	CYPRESS	2Mbit (128Kx16)F-RAM Memory	获取价格
FM28V202-TGTR	CYPRESS	2Mbit (128Kx16)F-RAM Memory	获取价格
FM290	RECTRON	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 90V V(RRM), Silicon, DO-214AA, ROHS COM	获取价格
FM290A	RECTRON	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 90V V(RRM), Silicon, DO-214AC, ROHS COM	获取价格

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