Datasheet > FM28V202

FM28V202

更新时间： 2024-10-02 12:06:23

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储
页数	文件大小	规格书
18页	479K
描述
2Mbit (128Kx16)F-RAM Memory

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中文翻译

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数据手册

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FM28V202 数据手册

Preliminary

FM28V202

2Mbit (128K×16)F-RAM Memory

FEATURES

Superior to Battery-backed SRAM Modules

No Battery Concerns

2Mbit Ferroelectric Nonvolatile RAM

Organized as 128Kx16

Monolithic Reliability

Configurable as 256Kx8 Using /UB, /LB

True Surface Mount Solution, No Rework Steps

Superior for Moisture, Shock, and Vibration

10¹⁴Read/Write Cycles

NoDelay™ Writes

Page Mode Operation to 33MHz

Advanced High-Reliability Ferroelectric Process

Low Power Operation

2.0V – 3.6V Power Supply

Standby Current 120 A (typ)

Active Current 7 mA (typ)

SRAM Compatible

Industry Std. 128Kx16 SRAM Pinout

60 ns Access Time, 90 ns Cycle Time

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

44-pin “Green”/RoHS TSOP-II package

Advanced Features

Software Programmable Block Write Protect

DESCRIPTION

Pin Configuration

The FM28V202 is a 128Kx16 nonvolatile memory

that reads and writes like a standard SRAM. A

ferroelectric random access memory or F-RAM is

nonvolatile, which means that data is retained after

power is removed. It provides data retention for over

10 years while eliminating the reliability concerns,

functional disadvantages, and system design

complexities of battery-backed SRAM (BBSRAM).

Fast write timing and high write endurance make the

F-RAM superior to other types of memory.

DQ15

DQ14

DQ13

DQ12

VSS

VDD

DQ11

DQ10

DQ9

DQ8

/ZZ

A10

A11

DQ0

DQ1

DQ2

DQ3

VDD

VSS

DQ4

DQ5

DQ6

DQ7

A16

A15

A14

A13

A12

In-system operation of the FM28V202 is very similar

to other RAM devices and can be used as a drop-in

replacement for standard SRAM. Read and write

cycles may be triggered by /CE or simply by

changing the address. The F-RAM memory is

nonvolatile due to its unique ferroelectric memory

process. These features make the FM28V202 ideal

for nonvolatile memory applications requiring

frequent or rapid writes in the form of an SRAM.

The device is available in a 400 mil 44-pin TSOP-II

surface mount package. Device specifications are

guaranteed over industrial temperature range –40°C

to +85°C.

This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to

change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made.

Cypress Semiconductor Corporation

Document Number: 001-86602 Rev. **

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised March 12, 2013

12 3 4 5 6 7...18

中文翻译

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与FM28V202相关器件

型号	品牌	获取价格	描述	数据表
FM28V202A-TG	CYPRESS	获取价格	Memory Circuit, 128KX16, CMOS, PDSO44, TSOP2-44
FM28V202A-TG	INFINEON	获取价格	铁电存储器 (F-RAM)
FM28V202A-TGTR	CYPRESS	获取价格	Memory Circuit, 128KX16, CMOS, PDSO44, TSOP2-44
FM28V202A-TGTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM28V202-TG	CYPRESS	获取价格	2Mbit (128Kx16)F-RAM Memory
FM28V202-TGTR	CYPRESS	获取价格	2Mbit (128Kx16)F-RAM Memory
FM290	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 90V V(RRM), Silicon, DO-214AA, ROHS COM
FM290A	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 90V V(RRM), Silicon, DO-214AC, ROHS COM
FM290-W	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 90V V(RRM), Silicon, DO-214AA, ROHS COM
FM2981	ETC	获取价格	High Power Motorcycle Ignition Controller

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