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FM25H20-DG PDF预览

FM25H20-DG

更新时间: 2024-01-12 11:05:15
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路光电二极管
页数 文件大小 规格书
15页 335K
描述
2Mb Serial 3V F-RAM Memory

FM25H20-DG 技术参数

生命周期:Transferred零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.65Is Samacsys:N
JESD-30 代码:R-PDSO-G8长度:5.28 mm
内存密度:2097152 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8功能数量:1
端子数量:8字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:5.23 mmBase Number Matches:1

FM25H20-DG 数据手册

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Pre-Production  
FM25H20  
2Mb Serial 3V F-RAM Memory  
Features  
2M bit Ferroelectric Nonvolatile RAM  
Write Protection Scheme  
Hardware Protection  
Software Protection  
Organized as 256K x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
10 Year Data Retention  
Low Power Consumption  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Low Voltage Operation 2.7V – 3.6V  
Sleep Mode Current 3 µA (typ.)  
Very Fast Serial Peripheral Interface - SPI  
Industry Standard Configurations  
Up to 40 MHz Frequency  
Industrial Temperature -40°C to +85°C  
8-pin “Green”/RoHS TDFN Package  
8- pin “Green”/RoHS EIAJ SOIC Package  
Direct Hardware Replacement for Serial Flash  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Description  
Pin Configuration  
The FM25H20 is a 2-megabit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by Serial  
Flash and other nonvolatile memories.  
Top View  
/S  
Q
/W  
VDD  
/HOLD  
C
1
2
3
4
8
7
6
5
VSS  
D
1
2
3
4
8
7
6
5
VDD  
HOLD  
C
S
Unlike Serial Flash, the FM25H20 performs write  
operations at bus speed. No write delays are incurred.  
Data is written to the memory array immediately  
after it has been transferred to the device. The next  
bus cycle may commence without the need for data  
polling. The product offers virtually unlimited write  
endurance, orders of magnitude more endurance than  
Serial Flash. Also, F-RAM exhibits lower power  
consumption than Serial Flash.  
Q
W
VSS  
D
Pinout is equivalent to other SPI F-RAM devices.  
Pin Name  
Function  
/S  
Chip Select  
/W  
Write Protect  
Hold  
These capabilities make the FM25H20 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding industrial  
controls where the long write time of Serial Flash can  
cause data loss.  
/HOLD  
C
Serial Clock  
D
Q
Serial Data Input  
Serial Data Output  
Supply Voltage (2.7 to 3.6V)  
Ground  
VDD  
VSS  
The FM25H20 provides substantial benefits to users  
of Serial Flash as a hardware drop-in replacement.  
The FM25H20 uses the high-speed SPI bus, which  
enhances the high-speed write capability of F-RAM  
technology. Device specifications are guaranteed  
over an industrial temperature range of -40°C to  
+85°C.  
Ordering Information  
FM25H20-DG  
8-pin “Green”/RoHS TDFN  
8-pin “Green”/RoHS TDFN,  
Tape & Reel  
8-pin “Green”/RoHS EIAJ SOIC  
8-pin “Green”/RoHS EIAJ  
SOIC, Tape & Reel  
FM25H20-DGTR  
FM25H20-G  
FM25H20-GTR  
This is a product in the pre-production phase of development. Device  
characterization is complete and Ramtron does not expect to change the  
specifications. Ramtron will issue a Product Change Notice if any  
specification changes are made.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 2.2  
Sept. 2010  
Page 1 of 15  

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