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FM25L04B-DG PDF预览

FM25L04B-DG

更新时间： 2024-01-01 10:31:19
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
14页 208K
描述
4Kb Serial 3V F-RAM Memory

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中文翻译

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FM25L04B-DG 数据手册

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Preliminary  
FM25L04B  
4Kb Serial 3V F-RAM Memory  
Features  
Sophisticated Write Protection Scheme  
4K bit Ferroelectric Nonvolatile RAM  
•
•
Hardware Protection  
Software Protection  
•
•
•
•
•
Organized as 512 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
38 Year Data Retention (  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
@ +75ºC)  
Low Power Consumption  
•
•
•
Low Voltage Operation 2.7-3.6V  
200 µA Active Current (1 MHz)  
3 µA (typ.) Standby Current  
Very Fast Serial Peripheral Interface - SPI  
•
•
•
Up to 20 MHz Frequency  
Direct Hardware Replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Industry Standard Configuration  
•
•
Industrial Temperature -40°C to +85°C  
8-pin “Green”/RoHS SOIC and TDFN Packages  
Description  
Pin Configuration  
The FM25L04B is a 4-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 38 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
8
7
6
5
CS  
VDD  
HOLD  
SCK  
SI  
2
SO  
3
WP  
4
VSS  
Top View  
The FM25L04B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array immediately after each byte has  
been transferred to the device. The next bus cycle  
may commence without the need for data polling.  
The FM25L04B is capable of supporting 1014  
read/write cycles, or a million times more write  
cycles than EEPROM.  
1
2
3
4
8
7
6
5
VDD  
/CS  
SO  
/WP  
VSS  
/HOLD  
SCK  
SI  
Pin Name  
/CS  
Function  
Chip Select  
Write Protect  
Hold  
These capabilities make the FM25L04B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding industrial  
controls where the long write time of EEPROM can  
cause data loss.  
/WP  
/HOLD  
SCK  
SI  
SO  
VDD  
VSS  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
The FM25L04B provides substantial benefits to users  
Ordering Information  
of serial EEPROM as  
a
hardware drop-in  
FM25L04B-G  
“Green”/RoHS 8-pin SOIC  
“Green”/RoHS 8-pin SOIC,  
Tape & Reel  
replacement. The FM25L04B uses the high-speed  
SPI bus, which enhances the high-speed write  
FM25L04B-GTR  
capability  
of  
F-RAM  
technology.  
Device  
FM25L04B-DG  
“Green”/RoHS 8-pin TDFN  
specifications are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
FM25L04B-DGTR “Green”/RoHS 8-pin TDFN,  
Tape & Reel  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-F-RAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.3  
Feb. 2011  
Page 1 of 14  
1234567...14

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FM25L04B-G RAMTRON

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FM25L04B-GATR CYPRESS

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 		4Kb Serial 3V F-RAM Memory
FM25L04B-GTR RAMTRON

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 		4Kb Serial 3V F-RAM Memory
FM25L04B-GTR INFINEON

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 		铁电存储器 (F-RAM)
FM25L04-DG RAMTRON

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 		Memory Circuit, 512X8, CMOS, PDSO8, 3 X 6.40 MM, 0.65 MM PITCH, GREEN, TDFN-8
FM25L04-DGTR RAMTRON

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 		Memory Circuit, 512X8, CMOS, PDSO8, 3 X 6.40 MM, 0.65 MM PITCH, GREEN, TDFN-8

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