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FM24C512-G PDF预览

FM24C512-G

更新时间: 2024-11-14 04:18:39
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路光电二极管
页数 文件大小 规格书
12页 231K
描述
512Kb FRAM Serial Memory

FM24C512-G 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.79Is Samacsys:N
JESD-30 代码:R-PDSO-G8长度:5.28 mm
内存密度:524288 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8功能数量:1
端子数量:8字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:5.23 mmBase Number Matches:1

FM24C512-G 数据手册

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Preliminary  
FM24C512  
512Kb FRAM Serial Memory  
Features  
Low Power Operation  
5V Operation  
512Kbit Ferroelectric Nonvolatile RAM  
Organized as 65,536 x 8 bits  
250 A Active Current (100 kHz)  
120 A Standby Current  
High Endurance 10 Billion (1010) Read/Writes  
45 year Data Retention  
NoDelay Writes  
Advanced High-Reliability Ferroelectric Process  
Industry Standard Configuration  
Industrial Temperature -40 C to +85 C  
8-pin Green /RoHS EIAJ SOIC Package  
Fast Two-wire Serial Interface  
Up to 1 MHz Maximum Bus Frequency  
Supports Legacy Timing for 100 kHz & 400 kHz  
Description  
Pin Configuration  
The FM24C512 is a 512-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 45 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
2
3
4
8
7
6
5
NC  
A1  
VDD  
WP  
A2  
SCL  
SDA  
VSS  
The FM24C512 performs write operations at bus  
speed. No write delays are incurred. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers write  
endurance orders of magnitude higher than  
EEPROM. Also, FRAM exhibits much lower power  
during writes than EEPROM since write operations  
do not require an internally elevated power supply  
voltage for write circuits.  
Pin Names  
A1,A2  
SDA  
SCL  
WP  
Function  
Device Select Address  
Serial Data/Address  
Serial Clock  
Write Protect  
Ground  
VSS  
VDD  
Supply Voltage 5V  
These capabilities make the FM24C512 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
Ordering Information  
FM24C512-G  
Green /RoHS 8-pin EIAJ SOIC  
The FM24C512 is available in an 8-pin EIAJ SOIC  
package using an industry standard two-wire  
protocol. Ramtron s green packages are RoHS  
compliant. Specifications are guaranteed over an  
industrial temperature range of -40°C to +85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 1.0  
Aug. 2006  
Page 1of 12  

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