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FM24C64B-G PDF预览

FM24C64B-G

更新时间： 2024-11-14 10:34:35
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
12页 288K
描述
64Kb Serial 5V F-RAM Memory

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中文翻译

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FM24C64B-G 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SOIC包装说明：SOP, SOP8,.25
针数：8Reach Compliance Code：unknown
HTS代码：8542.32.00.71风险等级：8.32
Is Samacsys：NJESD-30 代码：R-PDSO-G8
长度：4.9 mm内存密度：65536 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
功能数量：1端子数量：8
字数：8192 words字数代码：8000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE电源：5 V
认证状态：Not Qualified座面最大高度：1.75 mm
最大待机电流：0.00001 A子类别：SRAMs
最大压摆率：0.0004 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：3.9 mmBase Number Matches：1

FM24C64B-G 数据手册

 浏览型号FM24C64B-G的Datasheet PDF文件第2页浏览型号FM24C64B-G的Datasheet PDF文件第3页浏览型号FM24C64B-G的Datasheet PDF文件第4页浏览型号FM24C64B-G的Datasheet PDF文件第5页浏览型号FM24C64B-G的Datasheet PDF文件第6页浏览型号FM24C64B-G的Datasheet PDF文件第7页 
Preliminary  
FM24C64B  
64Kb Serial 5V F-RAM Memory  
Features  
64K bit Ferroelectric Nonvolatile RAM  
Low Power Operation  
•
•
•
5V operation  
•
•
•
•
•
Organized as 8,192 x 8 bits  
100 µA Active Current (100 kHz)  
4 µA (typ.) Standby Current  
High Endurance 1 Trillion (1012) Read/Writes  
38 Year Data Retention  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Industry Standard Configuration  
•
•
Industrial Temperature -40° C to +85° C  
8-pin “Green”/RoHS SOIC (-G)  
Fast Two-wire Serial Interface  
•
•
•
Up to 1 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Description  
Pin Configuration  
The FM24C64B is a 64-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 38 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
8
7
6
5
A0  
A1  
A2  
VSS  
VDD  
WP  
SCL  
SDA  
2
3
4
The FM24C64B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array in the cycle after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately without the need  
for data polling. The FM24C64B is capable of  
supporting 1012 read/write cycles, or a million times  
more write cycles than EEPROM.  
Pin Names  
A0-A2  
SDA  
Function  
Device Select Address  
Serial Data/address  
Serial Clock  
SCL  
WP  
Write Protect  
These capabilities make the FM24C64B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writes with less overhead for the system.  
VSS  
Ground  
VDD  
Supply Voltage  
Ordering Information  
FM24C64B-G  
“Green”/RoHS 8-pin SOIC  
FM24C64B-GTR “Green”/RoHS 8-pin SOIC,  
Tape & Reel  
The FM24C64B provides substantial benefits to users  
of serial EEPROM, yet these benefits are available in  
a hardware drop-in replacement. The FM24C64B is  
available in an industry standard 8-pin SOIC package  
and uses  
a
familiar two-wire protocol. The  
specifications are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.3  
Feb. 2011  
Page 1 of 12  
1234567...12

中文翻译

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