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FM24C64C-GTR PDF预览

FM24C64C-GTR

更新时间： 2024-09-25 10:34:35
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
12页 270K
描述
64Kb Serial 5V F-RAM Memory

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中文翻译

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FM24C64C-GTR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.56Is Samacsys：N
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：4.9 mm内存密度：65536 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
功能数量：1端子数量：8
字数：8192 words字数代码：8000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V认证状态：Not Qualified
座面最大高度：1.75 mm最大待机电流：0.00001 A
子类别：SRAMs最大压摆率：0.0004 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.9 mm
Base Number Matches：1

FM24C64C-GTR 数据手册

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Preliminary  
FM24C64C  
64Kb Serial 5V F-RAM Memory  
Features  
Low Power Operation  
64K bit Ferroelectric Nonvolatile RAM  
5V operation  
100 A Active Current (100 kHz)  
4 A (typ.) Standby Current  
Organized as 8,192 x 8 bits  
High Endurance 1 Trillion (1012) Read/Writes  
36 Year Data Retention at +75C  
NoDelay™ Writes  
Industry Standard Configuration  
Advanced High-Reliability Ferroelectric Process  
Industrial Temperature -40C to +85C  
8-pin “Green”/RoHS SOIC (-G)  
Fast Two-wire Serial Interface  
Up to 1 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Description  
Pin Configuration  
The FM24C64C is a 64-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 36 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
8
7
6
5
A0  
VDD  
WP  
2
A1  
3
A2  
SCL  
SDA  
4
VSS  
The FM24C64C performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array in the cycle after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately without the need  
for data polling. The FM24C64C is capable of  
supporting 1012 read/write cycles, or a million times  
more write cycles than EEPROM.  
Pin Names  
A0-A2  
SDA  
Function  
Device Select Address  
Serial Data/address  
Serial Clock  
SCL  
WP  
VSS  
VDD  
Write Protect  
Ground  
Supply Voltage  
These capabilities make the FM24C64C ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writes with less overhead for the system.  
Ordering Information  
FM24C64C-G  
FM24C64C-GTR “Green”/RoHS 8-pin SOIC,  
“Green”/RoHS 8-pin SOIC  
Tape & Reel  
The FM24C64C provides substantial benefits to users  
of serial EEPROM, yet these benefits are available in  
a hardware drop-in replacement. The FM24C64C is  
available in an industry standard 8-pin SOIC package  
and uses  
a
familiar two-wire protocol. The  
specifications are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.1  
June 2011  
Page 1 of 12  
1234567...12

中文翻译

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