Datasheet > FM24C64B-GTR

FM24C64B-GTR

更新时间： 2024-11-15 15:19:11

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
18页	453K
描述
铁电存储器 (F-RAM)

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FM24C64B-GTR 数据手册

FM24C64B

64-Kbit (8K × 8) Serial (I²C) F-RAM

64-Kbit (8K

× 8) Serial (I²C) F-RAM

Features

Functional Description

The FM24C64B is a 64-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 151 years

while eliminating the complexities, overhead, and system-level

reliability problems caused by EEPROM and other nonvolatile

memories.

■ 64-Kbit ferroelectric random access memory (F-RAM) logically

organized as 8K × 8

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (See Data Retention and Endurance

on page 10)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

Unlike EEPROM, the FM24C64B performs write operations at

bus speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. Also, F-RAM exhibits much lower power during writes

than EEPROM since write operations do not require an internally

elevated power supply voltage for write circuits. The FM24C64B

is capable of supporting 10¹⁴read/write cycles, or 100 million

times more write cycles than EEPROM.

■ Fast 2-wire Serial interface (I²C)

❐ Up to 1-MHz frequency

❐ Direct hardware replacement for serial (I²C) EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Low power consumption

❐ 100 A (typ) active current at 100 kHz

❐ 4 A (typ) standby current

■ Voltage operation: V_DD= 4.5 V to 5.5 V

■ Industrial temperature: –40 C to +85 C

These capabilities make the FM24C64B ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

The FM24C64B provides substantial benefits to users of serial

(I²C) EEPROM as a hardware drop-in replacement. The device

specifications are guaranteed over an industrial temperature

range of –40 C to +85 C.

For a complete list of related documentation, click here.

Logic Block Diagram

8 K x 8

F-RAM Array

Address

Counter

Latch

Serial to Parallel

SDA

Data Latch

Converter

SCL

Control Logic

A2-A0

Cypress Semiconductor Corporation

Document Number: 001-84454 Rev. *I

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised December 5, 2018

12 3 4 5 6 7...18

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与FM24C64B-GTR相关器件

型号	品牌	获取价格	描述	数据表
FM24C64C	RAMTRON	获取价格	64Kb Serial 5V F-RAM Memory
FM24C64C-G	RAMTRON	获取价格	64Kb Serial 5V F-RAM Memory
FM24C64C-GTR	RAMTRON	获取价格	64Kb Serial 5V F-RAM Memory
FM24C64D	FM	获取价格	EEPROM
FM24C64E	FAIRCHILD	获取价格	64K-Bit Standard 2-Wire Bus Interface Serial EEPROM
FM24C64EM8	ETC	获取价格	I2C Serial EEPROM
FM24C64EM8X	ETC	获取价格	I2C Serial EEPROM
FM24C64EMT8	ETC	获取价格	I2C Serial EEPROM
FM24C64EMT8X	ETC	获取价格	I2C Serial EEPROM
FM24C64EN	ETC	获取价格	I2C Serial EEPROM

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