Datasheet > FM16W08

FM16W08

更新时间： 2024-10-30 10:34:35

品牌	Logo	应用领域
铁电 - RAMTRON		/
页数	文件大小	规格书
11页	96K
描述
64Kb Wide Voltage Bytewide F-RAM

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中文翻译

获取价格

数据手册

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FM16W08 数据手册

Preliminary

FM16W08

64Kb Wide Voltage Bytewide F-RAM

Features

SRAM & EEPROM Compatible

64Kbit Ferroelectric Nonvolatile RAM

•

JEDEC 8Kx8 SRAM & EEPROM pinout

70 ns Access Time

130 ns Cycle Time

•

Organized as 8,192 x 8 bits

High Endurance 100 Trillion (10¹⁴) Read/Writes

38 year Data Retention (

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

@ +75C)

Low Power Operation

•

Wide Voltage Operation 2.7V to 5.5V

12 mA Active Current

20 µA (typ.) Standby Current

Superior to BBSRAM Modules

•

No Battery Concerns

Monolithic Reliability

True Surface Mount Solution, No Rework Steps

Superior for Moisture, Shock, and Vibration

Resistant to Negative Voltage Undershoots

Industry Standard Configuration

•

Industrial Temperature -40° C to +85° C

28-pin “Green”/RoHS SOIC Package

Description

Pin Configuration

The FM16W08 is a 64-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile but operates in other respects as a RAM.

It provides data retention for 38 years while

eliminating the reliability concerns, functional

disadvantages and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing

and high write endurance make F-RAM superior to

other types of nonvolatile memory.

VDD

A12

A11

A10

In-system operation of the FM16W08 is very similar

to other RAM devices. Minimum read- and write-

cycle times are equal. The F-RAM memory, however,

is nonvolatile due to its unique ferroelectric memory

process. Unlike BBSRAM, the FM16W08 is a truly

monolithic nonvolatile memory. It provides the same

functional benefits of a fast write without the

disadvantages associated with modules and batteries

or hybrid memory solutions.

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

Ordering Information

These capabilities make the FM16W08 ideal for

nonvolatile memory applications requiring frequent

or rapid writes in a bytewide environment. The

availability of a true surface-mount package improves

the manufacturability of new designs. Device

specifications are guaranteed over an industrial

temperature range of -40°C to +85°C.

FM16W08-SG

28-pin “Green” SOIC

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 1.2

Mar. 2011

Page 1 of 11

12 3 4 5 6 7...11

中文翻译

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与FM16W08相关器件

型号	品牌	获取价格	描述	数据表
FM16W08-SG	RAMTRON	获取价格	64Kb Wide Voltage Bytewide F-RAM
FM16W08-SG	CYPRESS	获取价格	64Kb Wide Voltage Bytewide F-RAM
FM16W08-SG	INFINEON	获取价格	铁电存储器 (F-RAM)
FM16W08-SGTR	CYPRESS	获取价格	Memory Circuit, 8KX8, CMOS, PDSO28, ROHS COMPLIANT, SOIC-28
FM16W08-SGTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM1702SL	ETC	获取价格	通用读卡机芯片
FM175	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 16A I(C) \| SOT-119VAR
FM17550	FM	获取价格	智能识别设备
FM17580	FM	获取价格	智能识别设备
FM17610	FM	获取价格	智能识别设备

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