FM 175
175 Watts, 28 Volts
Broadcast 88 - 108 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55HW, STYLE 2
TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is
designed for pulsed systems in the frequency band 88-108 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. Surface passivation eliminates contamination and extends life. Low
thermal resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
190 Watts
Maximum Voltage and Current
BVces
BVebo Emitter to Base Voltage
Ic Collector Current
Collector to Base Voltage
65 Volts
4.0 Volts
16 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST
MIN
TYP
MAX UNITS
CONDITIONS
Pout
Pin
Pg
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 88-108 MHz
Vcc = 28 Volts
175
9.0
Watts
Watts
dB
22
10
70
%
η
c
F = 108 MHz
4:1
VSWR
BVebo
BVces
BVceo
Cob
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdoown
Capacitance Collector to Base
DC - Current Gain
Ie = 20 mA
Ic = 25 mA
Ic = 50mA
4.0
65
33
Volts
Volts
Volts
pF
Vcb = 28V
105
hFE
Ic = 8.5A, Vce=5V
10
Thermal Resistance
Tc = 70oC
0.7
oC/W
jc1
θ
Note 1: Tc= + 25oC unless otherwise specified
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120