FM16W08
64-Kbit (8 K × 8) Wide Voltage Bytewide
F-RAM Memory
64-Kbit (8
K × 8) Wide Voltage Bytewide F-RAM Memory
■ Industrial temperature: –40 C to +85 C
Features
■ 28-pin small outline integrated circuit (SOIC) package
■ 64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8 K × 8
■ Restriction of hazardous substances (RoHS) compliant
❐ High-endurance 100 trillion (1014) read/writes
Functional Overview
❐ 151-year data retention (see the Data Retention and
Endurance table)
The FM16W08 is a 8 K × 8 nonvolatile memory that reads and
writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing and high
write endurance make the F-RAM superior to other types of
memory.
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ SRAM and EEPROM compatible
❐ Industry-standard 8 K × 8 SRAM and EEPROM pinout
❐ 70-ns access time, 130-ns cycle time
■ Superior to battery-backed SRAM modules
❐ No battery concerns
The FM16W08 operation is similar to that of other RAM devices
and therefore, it can be used as a drop-in replacement for a
standard SRAM in a system. Minimum read and write cycle times
are equal. The F-RAM memory is nonvolatile due to its unique
ferroelectric memory process. These features make the
FM16W08 ideal for nonvolatile memory applications requiring
frequent or rapid writes.
❐ Monolithic reliability
❐ True surface mount solution, no rework steps
❐ Superior for moisture, shock, and vibration
❐ Resistant to negative voltage undershoots
■ Low power consumption
❐ Active current 12 mA (max)
❐ Standby current 20 A (typ)
The device is available in a 28-pin SOIC surface mount package.
Device specifications are guaranteed over the industrial
temperature range –40 °C to +85 °C.
■ Wide voltage operation: VDD = 2.7 V to 5.5 V
For a complete list of related documentation, click here.
Logic Block Diagram
A
12-0
A
12-0
8 K x 8
F-RAM Array
CE
Control
Logic
DQ
7-0
WE
OE
I/O Latch & Bus Driver
Cypress Semiconductor Corporation
Document Number: 001-86210 Rev. *F
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised September 8, 2015
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