5秒后页面跳转
FM1100W-T PDF预览

FM1100W-T

更新时间: 2024-09-19 12:58:31
品牌 Logo 应用领域
RECTRON 整流二极管光电二极管
页数 文件大小 规格书
3页 32K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, SMX, 2 PIN

FM1100W-T 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMX, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.6
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-C2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:100 V
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

FM1100W-T 数据手册

 浏览型号FM1100W-T的Datasheet PDF文件第2页浏览型号FM1100W-T的Datasheet PDF文件第3页 
FM180B  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
FM1100B  
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
VOLTAGE RANGE 80 to 100 Volts CURRENT 1.0 Ampere  
FEATURES  
* Low switching noise  
* Low forward voltage drop  
* High current capability  
* High switching capability  
* High surge capabitity  
* High reliability  
DO-214AA  
MECHANICAL DATA  
(
)
0.083 2.11  
(
)
)
0.155 3.94  
* Case: Molded plastic  
(
)
0.077 1.96  
(
0.130 3.30  
* Epoxy: Device has UL flammability classification 94-O  
* Lead: MIL-STD-202E method 208C guaran
* Metallurgically bonded construction  
* Mounting position: Any  
(
)
)
0.180 4.57  
(
0.160 4.06  
* Weight: 0.098 gram  
(
)
0.012 0.305  
(
)
0.006 0.152  
(
)
)
)
0.096 2.44  
(
0.084 2.13  
(
0.060 1.52  
(
)
)
0.008 0.203  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
(
)
0.030 0.76  
(
0.004 0.102  
(
)
)
0.220 5.59  
(
0.205 5.21  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
FM180B  
FM1100B  
100  
UNITS  
Volts  
V
V
RRM  
RMS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
80  
56  
70  
Volts  
V
DC  
O
Volts  
Maximum DC Blocking Voltage  
80  
100  
Maximum Average Forward Rectified Current  
at Derating Lead Temperature  
I
1.0  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
40  
57  
Amps  
Typical Thermal Resistance (Note 1)  
Typical Junction Capacitance (Note 2)  
Operating Temperature Range  
R θ J A  
0C/W  
CJ  
J
110  
150  
pF  
0 C  
T
Storage Temperature Range  
T
STG  
-55 to + 150  
0 C  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
FM180B  
FM1100B  
.85  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 1.0A DC  
V
F
= 25oC  
Maximum Average Reverse Current  
@T  
A
1.0  
0.5  
uA  
I
R
at Rated DC Blocking Voltage  
@TJ = 125oC  
mA  
NOTES : 1. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.  
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
2002-10  

与FM1100W-T相关器件

型号 品牌 获取价格 描述 数据表
FM1100W-W RECTRON

获取价格

Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, SMX, 2 PIN
FM1105 RAMTRON

获取价格

Nonvolatile 5V Dual State Saver
FM1105_09 RAMTRON

获取价格

Nonvolatile 5V Dual State Saver
FM1105-GA RAMTRON

获取价格

Nonvolatile 5V Dual State Saver
FM1105-GATR RAMTRON

获取价格

Nonvolatile 5V Dual State Saver
FM1106 RAMTRON

获取价格

Nonvolatile 3V Dual State Saver
FM1106 NSC

获取价格

TRANSISTOR,JFET,N-CHANNEL,35V V(BR)DSS,10MA I(DSS),TO-99
FM1106_09 RAMTRON

获取价格

Nonvolatile 3V Dual State Saver
FM1106A NSC

获取价格

TRANSISTOR,JFET,N-CHANNEL, DUAL,10MA I(DSS),TO-99
FM1106B-SE RAMTRON

获取价格

暂无描述