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FK10SM-10 PDF预览

FK10SM-10

更新时间: 2024-11-18 20:29:15
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网开关晶体管
页数 文件大小 规格书
6页 88K
描述
10A, 500V, 1.13ohm, N-CHANNEL, Si, POWER, MOSFET, SC-65, TO-3P, 3 PIN

FK10SM-10 技术参数

生命周期:Not Recommended零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.3
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):10 A最大漏源导通电阻:1.13 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FK10SM-10 数据手册

 浏览型号FK10SM-10的Datasheet PDF文件第2页浏览型号FK10SM-10的Datasheet PDF文件第3页浏览型号FK10SM-10的Datasheet PDF文件第4页浏览型号FK10SM-10的Datasheet PDF文件第5页浏览型号FK10SM-10的Datasheet PDF文件第6页 
To all our customers  
Regarding the change of names mentioned in the document, such as Mitsubishi  
Electric and Mitsubishi XX, to Renesas Technology Corp.  
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi  
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names  
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.  
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been  
made to the contents of the document, and these changes do not constitute any alteration to the  
contents of the document itself.  
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices  
and power devices.  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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MITSUBISHI Nch POWER MOSFET