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FK10UM-10 PDF预览

FK10UM-10

更新时间: 2024-11-20 22:08:27
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管局域网
页数 文件大小 规格书
5页 54K
描述
HIGH-SPEED SWITCHING USE

FK10UM-10 技术参数

生命周期:Transferred零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.36
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A最大漏源导通电阻:1.13 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FK10UM-10 数据手册

 浏览型号FK10UM-10的Datasheet PDF文件第2页浏览型号FK10UM-10的Datasheet PDF文件第3页浏览型号FK10UM-10的Datasheet PDF文件第4页浏览型号FK10UM-10的Datasheet PDF文件第5页 
MITSUBISHI Nch POWER MOSFET  
FK10UM-10  
HIGH-SPEED SWITCHING USE  
FK10UM-10  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
1.3  
10.5MAX.  
r
φ 3.6  
1.0  
0.8  
2.54  
2.54  
0.5  
2.6  
q
w e  
w r  
q GATE  
w DRAIN  
e SOURCE  
r DRAIN  
q
¡VDSS ................................................................................500V  
¡rDS (ON) (MAX) .............................................................. 1.13  
¡ID ......................................................................................... 10A  
¡Integrated Fast Recovery Diode (MAX.) ........150ns  
e
TO-220  
APPLICATION  
Servo motor drive, Robot, UPS, Inverter Fluorecent  
lamp, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
500  
VGS = 0V  
VDS = 0V  
±30  
V
10  
A
IDM  
IS  
30  
10  
A
Drain current (Pulsed)  
Source current  
A
ISM  
30  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Weight  
PD  
125  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
2.0  
Tstg  
Typical value  
Feb.1999  

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