FK10UM-12

更新时间： 2024-09-25 22:08:27

品牌	Logo	应用领域
POWEREX		晶体开关晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
5页	60K
描述
HIGH-SPEED SWITCHING USE

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中文翻译

获取价格

数据手册

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FK10UM-12 数据手册

MITSUBISHI Nch POWER MOSFET

FK10UM-12

HIGH-SPEED SWITCHING USE

FK10UM-12

OUTLINE DRAWING

Dimensions in mm

4.5

1.3

10.5MAX.

φ 3.6

1.0

0.8

2.54

0.5

2.6

w e

w r

q GATE

w DRAIN

e SOURCE

r DRAIN

¡VDSS ................................................................................600V

¡rDS (ON) (MAX) .............................................................. 1.18Ω

¡ID ......................................................................................... 10A

¡Integrated Fast Recovery Diode (MAX.) ........150ns

TO-220

APPLICATION

Servo motor drive, Robot, UPS, Inverter Fluorecent

lamp, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

600

VGS = 0V

VDS = 0V

±30

IDM

Drain current (Pulsed)

Source current

ISM

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Weight

150

°C

Tch

–55 ~ +150

2.0

Tstg

—

Typical value

Feb.1999

12 3 4 5

中文翻译

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与FK10UM-12相关器件

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FK10UM9	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 10A I(D) \| TO-220AB
FK10UM-9	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FK10UM-9	RENESAS	获取价格	MITSUBISHI Nch POWER MOSFET
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FK10VS10	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 10A I(D) \| TO-263AB
FK10VS-10	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FK10VS-10	POWEREX	获取价格	HIGH-SPEED SWITCHING USE
FK10VS-10-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Met
FK10VS-10-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Met
FK10VS12	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 10A I(D) \| TO-263AB