Datasheet > FGA25N12ANTD

FGA25N12ANTD

更新时间： 2024-09-17 22:05:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
9页	862K
描述
1200V NPT Trench IGBT

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中文翻译

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FGA25N12ANTD 数据手册

May 2005

FGA25N120ANTD

1200V NPT Trench IGBT

Features

Description

•

NPT Trench Technology, Positive temperature coefficient

Using Fairchild's proprietary trench design and advanced NPT

technology, the 1200V NPT IGBT offers superior conduction

and switching performances, high avalanche ruggedness and

easy parallel operation.

Low saturation voltage: V

= 2.0V

CE(sat), typ

@ I = 25A and T = 25°C

•

Low switching loss: E

= 0.96mJ

off, typ

This device is well suited for the resonant or soft switching

application such as induction heating, microwave oven, etc.

@ I = 25A and T = 25°C

Extremely enhanced avalanche capability

TO-3P

Absolute Maximum Ratings

Symbol

CES

Description

FGA25N120ANTD

Units

Collector-Emitter Voltage

1200

Gate-Emitter Voltage

GES

Collector Current

@ T

25°C

Collector Current

@ T = 100°C

Pulsed Collector Current (Note 1)

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

@ T = 100°C

150

@ T

25°C

312

°C

@ T = 100°C

125

-55 to +150

300

stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Symbol

θJC

θJA

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction-to-Case for IGBT

Thermal Resistance, Junction-to-Case for Diode

Thermal Resistance, Junction-to-Ambient

0.4

2.0

°C/W

FGA25N120ANTD Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

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