5秒后页面跳转
FGA25N135AND PDF预览

FGA25N135AND

更新时间: 2024-09-18 20:41:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD
页数 文件大小 规格书
8页 537K
描述
Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel

FGA25N135AND 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):40 A集电极-发射极最大电压:1350 V
门极发射器阈值电压最大值:7.5 V门极-发射极最大电压:20 V
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):310 W子类别:Insulated Gate BIP Transistors
表面贴装:NOBase Number Matches:1

FGA25N135AND 数据手册

 浏览型号FGA25N135AND的Datasheet PDF文件第2页浏览型号FGA25N135AND的Datasheet PDF文件第3页浏览型号FGA25N135AND的Datasheet PDF文件第4页浏览型号FGA25N135AND的Datasheet PDF文件第5页浏览型号FGA25N135AND的Datasheet PDF文件第6页浏览型号FGA25N135AND的Datasheet PDF文件第7页 
IGBT  
FGA25N135AND  
General Description  
Features  
Fairchild 1350V NPT IGBTs provide an optimum solution  
for resonant and quasi-resonant circuitry such as induction  
heating (IH) jars and cookers. With increase in the rated  
voltage, the FGL25N135AND is specially designed for  
deriving higher power than 1200V rated IGBTs in such  
applications.  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.4 V @ I = 25A  
CE(sat)  
C
CO-PAK, IGBT with FRD : t = 235ns (typ.)  
rr  
Applications  
AC & DC motor controls, general purpose inverters, SMPS and Induction Heating.  
C
E
G
TO-3P  
G
C
E
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
FGA25N135AND  
Units  
V
V
V
Collector-Emitter Voltage  
1350  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
40  
25  
A
C
I
C
Collector Current  
@ T = 100°C  
A
C
I
I
I
Pulsed Collector Current  
75  
A
CM (1)  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
@ T = 100°C  
25  
A
F
C
150  
A
FM  
P
@ T  
=
25°C  
310  
W
W
°C  
°C  
D
C
@ T = 100°C  
125  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Case  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
(IGBT)  
0.4  
2.0  
40  
θJC  
θJC  
θJA  
(DIODE)  
--  
Thermal Resistance, Junction-to-Ambient  
--  
©2003 Fairchild Semiconductor Corporation  
FGA25N135AND Rev. A