生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 40 A | 集电极-发射极最大电压: | 1350 V |
门极发射器阈值电压最大值: | 7.5 V | 门极-发射极最大电压: | 20 V |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 310 W | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FGA25S125P | FAIRCHILD |
获取价格 |
Shorted AnodeTM IGBT | |
FGA25S125P-SN00337 | ONSEMI |
获取价格 |
IGBT,1250v,25A,短路阳极 | |
FGA2JK104C++2CL5 | AISHI |
获取价格 |
Film DC | |
FGA2JK104E++2EL5 | AISHI |
获取价格 |
Film DC | |
FGA2JK105E++2EL5 | AISHI |
获取价格 |
Film DC | |
FGA2JK154C++2CL5 | AISHI |
获取价格 |
Film DC | |
FGA2JK154E++2EL5 | AISHI |
获取价格 |
Film DC | |
FGA2JK155F++2FL5 | AISHI |
获取价格 |
Film DC | |
FGA2JK224C++2CL5 | AISHI |
获取价格 |
Film DC | |
FGA2JK224E++2EL5 | AISHI |
获取价格 |
Film DC |