Datasheet > FF600R12ME4W_B73

FF600R12ME4W_B73

更新时间： 2024-09-17 11:13:11

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FF600R12ME4W_B73 数据手册

FF600R12ME4W_B73

™

EconoDUAL 3 module

™

EconoDUAL 3 module with Trench/Fieldstop IGBT4 and emitter controlled diode and PressFIT / NTC

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 600 A / I_CRM= 1200 A

- Low V_CE,sat

- T_vj,op= 150°C

- V_CE,satwith positive temperature coeﬀicient

• Mechanical features

- Direct-cooled base plate

- Isolated base plate

- High power density

- Standard housing

Potential applications

• High-power converters

• Motor drives

• Servo drives

• UPS systems

• Wind turbines

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2022-04-01

12 3 4 5 6 7...15

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型号	品牌	获取价格	描述	数据表
FF600R12ME7_B11	INFINEON	获取价格	PressFIT
FF600R16KF1	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1.6KV V(BR)CES \| 600A I(C) \| M:HL124HW114
FF600R16KF4	EUPEC	获取价格	Maximum rated values / Electrical properties
FF600R17KE3	EUPEC	获取价格	IGBT-modules
FF600R17KE3_B2	EUPEC	获取价格	IGBT-modules
FF600R17KE3_B2	INFINEON	获取价格	Enlarged Diode
FF600R17KE3B2NOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
FF600R17KE3NOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 900A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
FF600R17KF6CB2V	ETC	获取价格	IGBT Module
FF600R17ME4	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, N-Channel, MODULE-11