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FF60UP30DN PDF预览

FF60UP30DN

更新时间: 2024-11-05 12:56:43
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 636K
描述
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode

FF60UP30DN 数据手册

 浏览型号FF60UP30DN的Datasheet PDF文件第2页浏览型号FF60UP30DN的Datasheet PDF文件第3页 
FF60UP30DN  
®
FF60UP30DN  
Pb Free Plating Product  
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode  
TO-3PB/TO-3PN  
APPLICATION  
Cathode(Bottom Side Metal Heatsink)  
· Freewheeling, Snubber, Clamp  
· Inversion Welder  
· PFC  
· Plating Power Supply  
· Ultrasonic Cleaner and Welder  
· Converter & Chopper  
· UPS  
Anode  
PRODUCT FEATURE  
Cathode  
· Ultrafast Recovery Time  
Internal Configuration  
Anode  
· Soft Recovery Characteristics  
· Low Recovery Loss  
Base Backside  
· Low Forward Voltage  
· High Surge Current Capability  
· Low Leakage Current  
GENERAL DESCRIPTION  
FF60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.  
ABSOLUTE MAXIMUM RATINGS  
TC=25°C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
Values  
300  
300  
30  
Unit  
V
VR  
Maximum D.C. Reverse Voltage  
Maximum Repetitive Reverse Voltage  
VRRM  
V
TC=110°C, Per Diode  
A
IF(AV)  
Average Forward Current  
TC=110°C, Per Package  
60  
A
IF(RMS)  
IFSM  
RMS Forward Current  
Non-Repetitive Surge Forward Current  
Power Dissipation  
TC=110°C, Per Diode  
42  
A
A
480  
TJ=45°C, t=10ms, 50Hz, Sine  
PD  
156  
-55to +150  
-55 to +150  
1.1  
W
°C  
TJ  
Junction Temperature  
Storage Temperature Range  
Module-to-Sink  
TSTG  
Torque  
Rth(J-C)  
Weight  
°C  
RecommendedM3)  
N·m  
°C /W  
g
Thermal Resistance  
Junction-to-Case, Per Diode  
0.8  
6
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max.  
Unit  
10  
10  
µA  
VR=300V  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
IRM  
Reverse Leakage Current  
mA  
VR=300V, TJ=125°C  
IF=30A  
1.25  
1.12  
22  
1.8  
--  
V
V
VF  
Forward Voltage  
IF=30A, TJ=125°C  
trr  
Reverse Recovery Time  
IF=1A, VR=30V, diF/dt=-200A/μs  
VR=150V, IF=30A  
--  
ns  
ns  
A
trr  
Reverse Recovery Time  
35  
--  
diF/dt=-200A/μs, TJ=25°C  
IRRM  
trr  
Max. Reverse Recovery Current  
Reverse Recovery Time  
2.5  
70  
--  
VR=150V, IF=30A  
--  
ns  
A
diF/dt=-200A/μs, TJ=125°C  
IRRM  
Max. Reverse Recovery Current  
6.8  
--  
Rev.05  
© 2006 Thinki Semiconductor Co.,Ltd.  
Page 1/3  
http://www.thinkisemi.com/  

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