Datasheet > FF60UP30DN

FF60UP30DN

更新时间： 2024-11-30 12:56:43

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
3页	636K
描述
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode

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中文翻译

获取价格

数据手册

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FF60UP30DN 数据手册

FF60UP30DN

Pb Free Plating Product

60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode

TO-3PB/TO-3PN

APPLICATION

Cathode(Bottom Side Metal Heatsink)

· Freewheeling, Snubber, Clamp

· Inversion Welder

· PFC

· Plating Power Supply

· Ultrasonic Cleaner and Welder

· Converter & Chopper

· UPS

Anode

PRODUCT FEATURE

Cathode

· Ultrafast Recovery Time

Internal Configuration

Anode

· Soft Recovery Characteristics

· Low Recovery Loss

Base Backside

· Low Forward Voltage

—

· High Surge Current Capability

· Low Leakage Current

GENERAL DESCRIPTION

FF60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.

ABSOLUTE MAXIMUM RATINGS

T_C=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Values

300

Unit

V_R

Maximum D.C. Reverse Voltage

Maximum Repetitive Reverse Voltage

V_RRM

T_C=110°C, Per Diode

I_F(AV)

Average Forward Current

T_C=110°C, Per Package

I_F(RMS)

I_FSM

RMS Forward Current

Non-Repetitive Surge Forward Current

Power Dissipation

T_C=110°C, Per Diode

480

T_J=45°C, t=10ms, 50Hz, Sine

P_D

156

-55to +150

-55 to +150

1.1

°C

T_J

Junction Temperature

Storage Temperature Range

Module-to-Sink

T_STG

Torque

R_th(J-C)

Weight

°C

Recommended（M3）

N·m

°C /W

Thermal Resistance

Junction-to-Case, Per Diode

0.8

ELECTRICAL CHARACTERISTICS

T_C=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Min. Typ. Max.

Unit

µA

V_R=300V

I_RM

Reverse Leakage Current

V_R=300V, T_J=125°C

I_F=30A

1.25

1.12

1.8

V_F

Forward Voltage

I_F=30A, T_J=125°C

t_rr

Reverse Recovery Time

I_F=1A, V_R=30V, di_F/dt=-200A/μs

V_R=150V, I_F=30A

t_rr

Reverse Recovery Time

di_F/dt=-200A/μs, T_J=25°C

I_RRM

t_rr

Max. Reverse Recovery Current

Reverse Recovery Time

2.5

V_R=150V, I_F=30A

di_F/dt=-200A/μs, T_J=125°C

I_RRM

Max. Reverse Recovery Current

6.8

Rev.05

Page 1/3

http://www.thinkisemi.com/

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中文翻译

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