Datasheet > FF2400RB12IP7

FF2400RB12IP7

更新时间： 2023-09-03 20:28:23

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FF2400RB12IP7 数据手册

FF2400RB12IP7

™

PrimePACK 3+ B-series module

™

PrimePACK 3+ B-series module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and NTC

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 2400 A / I_CRM= 4800 A

- High current density

- Low inductive design

- Low V_CE,sat

- T_vj,op= 150°C

- Overload operation up to 175°C

- TRENCHSTOP^TMIGBT7

• Mechanical features

- High creepage and clearance distances

- High power density

- Package with CTI > 400

Potential applications

• Three-level applications

• Solar applications

• Energy storage systems

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.20

2022-03-17

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
FF2400RB12IP7P	INFINEON	获取价格	Common Collector module
FF2483E	ZETEX	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2483E	DIODES	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2483J	DIODES	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2484E	DIODES	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2484E	ZETEX	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF2484J	ZETEX	获取价格	Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy,
FF25R06KF	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 600V V(BR)CES \| 25A I(C) \| M:HL080HD5.3
FF25R06KF2	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 600V V(BR)CES \| 25A I(C) \| M:HL080HD5.3
FF25R10K	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 25A I(C) \| MODULE-S