テクニカルインフォメーションꢀ/ꢀTechnicalꢀInformation
IGBT-モジュール
IGBT-Module
FF200R12KE4P
暫定データ
PreliminaryꢀData
IGBT-ꢁインバータꢀ/ꢀIGBT,Inverter
最大定格ꢀ/ꢀMaximumꢀRatedꢀValues
コレクタ・エミッタ間電圧
Collector-emitterꢀvoltage
Tvj = 25°C
VCES
IC nom
ICRM
ꢀ
ꢀ
ꢀ
ꢀ
1200
200
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
V
連続DCコレクタ電流
TH = 85°C, Tvj max = 175°C
ContinuousꢀDCꢀcollectorꢀcurrent
繰り返しピークコレクタ電流
tP = 1 ms
400
Repetitiveꢀpeakꢀcollectorꢀcurrent
ゲート・エミッタ間ピーク電圧
Gate-emitterꢀpeakꢀvoltage
VGES
+/-20
電気的特性ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
コレクタ・エミッタ間飽和電圧
Collector-emitterꢀsaturationꢀvoltage
IC = 200 A, VGE = 15 V
IC = 200 A, VGE = 15 V
IC = 200 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,75 2,15
2,00
2,05
V
V
V
VCE sat
ゲート・エミッタ間しきい値電圧
Gateꢀthresholdꢀvoltage
IC = 7,60 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
5,20 5,80 6,40
V
µC
Ω
ゲート電荷量
Gateꢀcharge
1,80
3,8
内蔵ゲート抵抗
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
入力容量
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
14,0
0,50
nF
nF
帰還容量
Reverseꢀtransferꢀcapacitance
コレクタ・エミッタ間遮断電流
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
400 nA
ゲート・エミッタ間漏れ電流
Gate-emitterꢀleakageꢀcurrent
ターンオン遅れ時間(誘導負荷)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,20
0,25
0,27
µs
µs
µs
ターンオン上昇時間(誘導負荷)
Riseꢀtime,ꢀinductiveꢀload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,045
0,05
0,055
µs
µs
µs
tr
td off
tf
ターンオフ遅れ時間(誘導負荷)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,50
0,60
0,62
µs
µs
µs
ターンオフ下降時間(誘導負荷)
Fallꢀtime,ꢀinductiveꢀload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,10
0,16
0,18
µs
µs
µs
ターンオンスイッチング損失
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 200 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 2,7 Ω
Tvj = 25°C
10,0
15,0
17,0
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
ターンオフスイッチング損失
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 200 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 2,7 Ω
Tvj = 25°C
17,0
26,0
29,0
mJ
mJ
mJ
Tvj = 150°C
短絡電流
SCꢀdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
tP ≤ 10 µs, Tvj = 150°C
800
A
???
IGBT部(1素子当り)ꢀ/ꢀperꢀIGBT
validꢀwithꢀIFXꢀpre-appliedꢀthermalꢀinterfaceꢀmaterial
RthJH
Tvj op
0,162 K/W
Thermalꢀresistance,ꢀjunctionꢀtoꢀheatsink
動作温度
-40
150
°C
Temperatureꢀunderꢀswitchingꢀconditions
preparedꢀby:ꢀAKB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2016-04-04
revision:ꢀV2.0
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