5秒后页面跳转
FF1400R12IP4 PDF预览

FF1400R12IP4

更新时间: 2024-11-05 10:32:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
9页 1231K
描述
PrimePACK?3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

FF1400R12IP4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X7针数:13
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.62Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):1400 A
集电极-发射极最大电压:1200 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X7
元件数量:2端子数量:7
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):7600 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1200 ns
标称接通时间 (ton):340 nsVCEsat-Max:2.05 V
Base Number Matches:1

FF1400R12IP4 数据手册

 浏览型号FF1400R12IP4的Datasheet PDF文件第2页浏览型号FF1400R12IP4的Datasheet PDF文件第3页浏览型号FF1400R12IP4的Datasheet PDF文件第4页浏览型号FF1400R12IP4的Datasheet PDF文件第5页浏览型号FF1400R12IP4的Datasheet PDF文件第6页浏览型号FF1400R12IP4的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF1400R12IP4  
PrimePACK™3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC  
PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC  
Vorläufige Daten / preliminary data  
V†Š» = 1200V  
I† ÒÓÑ = 1400A / I†ç¢ = 2800A  
Typische Anwendungen  
Typical Applications  
Auxiliary Inverters  
High Power Converters  
Motor Drives  
Hilfsumrichter  
••  
••  
••  
••  
••  
••  
Hochleistungsumrichter  
Motorantriebe  
Traktionsumrichter  
USV-Systeme  
Traction Drives  
UPS Systems  
Windgeneratoren  
Wind Turbines  
Elektrische Eigenschaften  
Electrical Features  
Erweiterte Sperrschichttemperatur TÝÎ ÓÔ  
Große DC-Festigkeit  
Extended Operation Temperature TÝÎ ÓÔ  
High DC Stability  
••  
••  
••  
Hohe Kurzschlussrobustheit, selbstlimitierender  
Kurzschlussstrom  
High Short Circuit Capability, Self Limiting Short  
Circuit Current  
Sehr große Robustheit  
Unbeatable Robustness  
V†ŠÙÈÚ with positive Temperature Coefficient  
Low V†ŠÙÈÚ  
••  
••  
••  
V†ŠÙÈÚ mit positivem Temperaturkoeffizienten  
niedriges V†ŠÙÈÚ  
Mechanische Eigenschaften  
Mechanical Features  
4kV AC 1min Isolationsfestigkeit  
4kV AC 1min Insulation  
••  
••  
••  
••  
••  
••  
Gehäuse mit CTI > 400  
Package with CTI > 400  
Große Luft- und Kriechstrecken  
Hohe Last- und thermische Wechselfestigkeit  
Hohe Leistungsdichte  
High Creepage and Clearance Distances  
High Power and Thermal Cycling Capability  
High Power Density  
Substrat für kleinen thermischen Widerstand  
Substrate for Low Thermal Resistance  
Module Label Code  
Barcode Code 128  
Content of the Code  
Digit  
Module Serial Number  
1 - 5  
Module Material Number  
Production Order Number  
Datecode (Production Year)  
Datecode (Production Week)  
6 - 11  
12 - 19  
20 - 21  
22 - 23  
DMX - Code  
prepared by: AC  
approved by: MS  
date of publication: 2009-08-13  
revision: 2.4  
material no: 32925  
1

与FF1400R12IP4相关器件

型号 品牌 获取价格 描述 数据表
FF1400R12IP4_ENG INFINEON

获取价格

Insulated Gate Bipolar Transistor,
FF1400R12IP4BOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-13
FF1400R12IP4P INFINEON

获取价格

TIM
FF1400R12IP4PBOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-12
FF1400R17IP4 INFINEON

获取价格

PrimePACK module and NTC
FF1400R17IP4BOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-12
FF1400R17IP4P INFINEON

获取价格

Insulated Gate Bipolar Transistor,
FF1400R17IP4PBOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-12
FF14FM EBMPAPST

获取价格

TUBEAXIAL
FF15 SEMTECH

获取价格

RECTIFIER, up to 150V, 1.8A, 30ns