是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X7 | 针数: | 13 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.62 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 1400 A |
集电极-发射极最大电压: | 1200 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 7600 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 1200 ns |
标称接通时间 (ton): | 340 ns | VCEsat-Max: | 2.05 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF1400R12IP4_ENG | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FF1400R12IP4BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-13 | |
FF1400R12IP4P | INFINEON |
获取价格 |
TIM | |
FF1400R12IP4PBOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-12 | |
FF1400R17IP4 | INFINEON |
获取价格 |
PrimePACK module and NTC | |
FF1400R17IP4BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-12 | |
FF1400R17IP4P | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FF1400R17IP4PBOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-12 | |
FF14FM | EBMPAPST |
获取价格 |
TUBEAXIAL | |
FF15 | SEMTECH |
获取价格 |
RECTIFIER, up to 150V, 1.8A, 30ns |