TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation
IGBT-Module
IGBT-modules
FF150R12KE3G
62mmꢀC-SerienꢀModulꢀmitꢀTrench/FeldstopꢀIGBT3ꢀundꢀEmitterꢀControlledꢀHighꢀEfficiencyꢀDiodeꢀ
62mmꢀC-seriesꢀmoduleꢀwithꢀtheꢀtrench/fieldstopꢀIGBT3ꢀandꢀEmitterꢀControlledꢀHighꢀEfficiencyꢀdiodeꢀ
IGBT,Wechselrichterꢀ/ꢀIGBT,Inverter
HöchstzulässigeꢀWerteꢀ/ꢀMaximumꢀRatedꢀValues
Kollektor-Emitter-Sperrspannung
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1200
ꢀ
ꢀ
ꢀ
V
Collector-emitterꢀvoltage
Kollektor-Dauergleichstrom
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
150
225
A
A
PeriodischerꢀKollektor-Spitzenstrom
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
300
780
A
Gesamt-Verlustleistung
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 150
ꢀ W
Gate-Emitter-Spitzenspannung
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
+/-20
ꢀ
V
CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emitterꢀsaturationꢀvoltage
IC = 150 A, VGE = 15 V
IC = 150 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
1,70 2,15
2,00
V
V
VCE sat
VGEth
QG
Gate-Schwellenspannung
Gateꢀthresholdꢀvoltage
IC = 6,00 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
5,0
5,8
1,40
5,0
11,0
0,50
ꢀ
6,5
V
µC
Ω
Gateladung
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
InternerꢀGatewiderstand
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Eingangskapazität
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
Rückwirkungskapazität
Reverseꢀtransferꢀcapacitance
Cres
ICES
IGES
td on
Kollektor-Emitter-Reststrom
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
Gate-Emitter-Reststrom
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
Einschaltverzögerungszeit,ꢀinduktiveꢀLast
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 150 A, VCE = 600 V
VGE = ±15 V
RGon = 4,8 Ω
Tvj = 25°C
Tvj = 125°C
0,25
0,30
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
Anstiegszeit,ꢀinduktiveꢀLast
Riseꢀtime,ꢀinductiveꢀload
IC = 150 A, VCE = 600 V
VGE = ±15 V
RGon = 4,8 Ω
Tvj = 25°C
Tvj = 125°C
0,09
0,10
µs
µs
tr
td off
tf
Abschaltverzögerungszeit,ꢀinduktiveꢀLast
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 150 A, VCE = 600 V
VGE = ±15 V
RGoff = 4,8 Ω
Tvj = 25°C
Tvj = 125°C
0,55
0,65
µs
µs
Fallzeit,ꢀinduktiveꢀLast
Fallꢀtime,ꢀinductiveꢀload
IC = 150 A, VCE = 600 V
VGE = ±15 V
RGoff = 4,8 Ω
Tvj = 25°C
Tvj = 125°C
0,13
0,18
µs
µs
EinschaltverlustenergieꢀproꢀPuls
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 150 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V
RGon = 4,8 Ω
Tvj = 25°C
Tvj = 125°C
mJ
mJ
Eon
Eoff
11,0
26,0
AbschaltverlustenergieꢀproꢀPuls
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 150 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V
RGoff = 4,8 Ω
Tvj = 25°C
Tvj = 125°C
mJ
mJ
ꢀ
ꢀ
Kurzschlußverhalten
SCꢀdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
ISC
ꢀ
tP ≤ 10 µs, Tvj = 125°C
600
A
Wärmewiderstand,ꢀChipꢀbisꢀGehäuse
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
proꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
0,16 K/W
K/W
Wärmewiderstand,ꢀGehäuseꢀbisꢀKühlkörper proꢀIGBTꢀ/ꢀperꢀIGBT
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,03
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
TemperaturꢀimꢀSchaltbetrieb
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
125
°C
preparedꢀby:ꢀMM
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-02
revision:ꢀ3.2
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