Datasheet > FEPF6DTHE3

FEPF6DTHE3

更新时间： 2024-11-10 01:17:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	151K
描述
Dual Common Cathode Ultrafast Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FEPF6DTHE3 数据手册

FEP6xT, FEPF6xT, FEPB6xT

www.vishay.com

Vishay General Semiconductor

Dual Common Cathode Ultrafast Rectifier

FEATURES

TO-220AB

ITO-220AB

• Power pack

• Glass passivated pellet chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C (for TO-263AB package)

FEP6xT Series

FEPF6xT Series

PIN 1

PIN 2

PIN 1

PIN 2

• Solder dip 275 °C max. 10 s, per JESD 22-B106

(for TO-220AB and ITO-220AB package)

CASE

PIN 3

TO-263AB

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

FEPB6xT Series

For use in high frequency rectifier of switching mode

power supplies, inverters, freewheeling diodes, DC/DC

converters, and other power switching application.

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

PRIMARY CHARACTERISTICS

I_F(AV)

6.0 A

V_RRM

I_FSM

t_rr

50 V to 200 V

75 A

35 ns

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

V_F

0.975 V

150 °C

T_Jmax.

meets JESD 201 class 2 whisker test

TO-220AB, ITO-220AB,

TO-263AB

Package

Polarity: As marked

Diode variations

Common cathode

Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RMS

FEP6AT

FEP6BT

100

FEP6CT

150

FEP6DT

200

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

105

140

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 105 °C

V_DC

100

150

200

I_F(AV)

6.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

T_J, T_STG

V_AC

°C

Operating storage and temperature range

-55 to +150

1500

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Revision: 23-Feb-16

Document Number: 88598

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与FEPF6DTHE3相关器件

型号	品牌	获取价格	描述	数据表
FEPF6DTHE3/45	VISHAY	获取价格	Dual Common-Cathode Ultrafast Rectifier
FEPF6DT-HE3/45	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB,
FER8AT	VISHAY	获取价格	Rectifier Diode, 1 Element, 8A, 50V V(RRM),
FER8BT	VISHAY	获取价格	Rectifier Diode, 1 Element, 8A, 100V V(RRM),
FER8GT	VISHAY	获取价格	Rectifier Diode, 1 Element, 8A, 400V V(RRM),
FERA10D	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 200V CURRENT:10.0A
FERA16D	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 200V CURRENT:16.0A
FERA16G	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 400V CURRENT: 16.0A
FERA16J	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 600V CURRENT:16.0A
FERA20D	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 200V CURRENT:20.0A

与FEPF6DTHE3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

FEPF6DTHE3

FEPF6DTHE3 数据手册

与FEPF6DTHE3相关器件

与FEPF6DTHE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FEPF6DTHE3

FEPF6DTHE3 数据手册

与FEPF6DTHE3相关器件

与FEPF6DTHE3相关文章

您还可以找

您在本页遇到什么问题？