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FEP16ATD PDF预览

FEP16ATD

更新时间: 2024-10-25 22:31:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管局域网
页数 文件大小 规格书
3页 39K
描述
16 Ampere Glass Passivated Super Fast Rectifiers

FEP16ATD 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.59Is Samacsys:N
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ANODE AND CATHODE配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.975 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
最大功率耗散:8.33 W认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

FEP16ATD 数据手册

 浏览型号FEP16ATD的Datasheet PDF文件第2页浏览型号FEP16ATD的Datasheet PDF文件第3页 
Discr ete P OWER & Sign a l  
Tech n ologies  
FEP16AT - FEP16JT  
0.185(4.70)  
0.175(4.44)  
0.412(10.5)  
MAX  
Features  
0.055(1.40)  
0.045(1.14)  
0.154(3.91)  
0.148(3.74)  
Low forward voltage drop.  
High surge current capacity.  
High current capability.  
High reliability.  
0.113(2.87)  
0.103(2.62)  
0.27(6.86)  
0.23(5.84)  
0.594(15.1)  
0.587(14.9)  
TO-220AB  
2
3
1
0.16(4.06)  
0.14(3.56)  
Dimensions are in: inches (mm)  
0.11(2.79)  
0.10(2.54)  
0.56(14.22)  
0.53(13.46)  
PIN 1  
PIN 3  
PIN 1  
PIN 3  
PIN 1  
AC  
+
-
0.037(0.94)  
0.027(0.68)  
PIN 3  
CASE  
PIN 2  
CASE  
PIN 2  
CASE  
PIN 2  
Negative CT  
Suffix “A”  
Doubler  
Positive CT  
0.025(0.64)  
0.014(0.35)  
0.105(2.67)  
0.095(2.41)  
Suffix “D”  
16 Ampere Glass Passivated Super Fast Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
Average Rectified Current  
.375 " lead length @ TA = 100°C  
Peak Forward Surge Current  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
16  
A
if(surge)  
200  
A
PD  
8.33  
66  
15  
W
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
RθJA  
RθJL  
Tstg  
TJ  
Thermal Resistance, Junction to Lead  
Storage Temperature Range  
2.2  
°C/W  
°C  
-65 to +150  
-65 to +150  
Operating Junction Temperature  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
V
V
V
100  
DC Blocking Voltage  
Maximum Reverse Current  
@ rated VR TA = 25 C  
(Rated VR)  
10  
500  
A
A
µ
µ
°
TA = 100 C  
°
Maximum Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A  
Maximum Forward Voltage @ 8.0A  
35  
50  
nS  
V
0.95  
1.3  
1.5  
60  
Typical Junction Capacitance  
VR = 4.0. f = 1.0 MHz  
pF  
85  
FEP16AT - FEP16JT, Rev. A  
1999 Fairchild Semiconductor Corporation  

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