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FEP16BT-HE3/45 PDF预览

FEP16BT-HE3/45

更新时间: 2024-11-02 07:37:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 145K
描述
DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

FEP16BT-HE3/45 数据手册

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FEP(F,B)16AT thru FEP(F,B)16JT  
Vishay General Semiconductor  
Dual Common-Cathode Ultrafast Plastic Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
• AEC-Q101 qualified  
3
3
2
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 245 °C (for TO-263AB package)  
2
1
1
FEP16xT  
FEPF16xT  
PIN 1  
PIN 2  
CASE  
PIN 1  
• Solder Dip 260 °C, 40 seconds (for TO-220AB &  
ITO-220AB package)  
PIN 2  
PIN 3  
PIN 3  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
2
For use in high frequency rectifier of switching mode  
power supplies, inverters, free-wheeling diodes,  
dc-to-dc converters, and other power switching  
application.  
1
FEPB16xT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
trr  
8.0 A x 2  
50 V to 600 V  
200 A, 125 A  
35 ns, 50 ns  
VF  
0.95 V, 1.30 V, 1.50 V  
150 °C  
Polarity: As marked  
Tj max.  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
FEP  
16AT  
FEP  
16BT  
FEP  
16CT  
FEP  
16DT  
FEP  
16FT  
FEP  
16GT  
FEP  
16HT  
FEP  
16JT  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward  
rectified current at TC = 100 °C  
IF(AV)  
16  
A
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load per diode  
IFSM  
200  
125  
A
Operating storage and temperature range  
TJ, TSTG  
VAC  
- 55 to +150  
1500  
°C  
V
Isolation voltage (ITO-220AB only)  
From terminal to heatsink t = 1 minute  
Document Number 88596  
22-Aug-06  
www.vishay.com  
1

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