5秒后页面跳转
FEP16BTD PDF预览

FEP16BTD

更新时间: 2024-02-28 03:03:18
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 80K
描述
Rectifier Diode

FEP16BTD 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.02
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:ANODE AND CATHODE
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.975 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
最大功率耗散:8.33 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

FEP16BTD 数据手册

 浏览型号FEP16BTD的Datasheet PDF文件第2页浏览型号FEP16BTD的Datasheet PDF文件第3页 
PIN 1  
PIN 3  
+
CASE  
PIN 2  
FEP16AT - FEP16JT  
Positive CT  
Features  
PIN 1  
PIN 3  
-
CASE  
PIN 2  
Low forward voltage drop.  
High surge current capacity.  
High current capability.  
High reliability.  
Negative CT  
Suffix "A"  
1
2
PIN 1  
PIN 3  
3
AC  
TO-220AB  
CASE  
PIN 2  
Doubler  
Suffix "D"  
• Average Forward Current Rating at 16A (8A per Diode).  
Fast Rectifiers (Glass Passivated)  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Value  
Symbol  
Units  
Parameter  
16AT 16BT 16CT 16DT 16FT 16GT  
16HT  
16JT  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse  
Voltage  
Average Rectified Forward Current,  
50  
100 150 200 300  
400  
500  
600  
V
A
A
16  
.375 " lead length @ T = 100 C  
°
A
Non-repetitive Peak Forward Surge  
Current  
200  
8.3 ms Single Half-Sine-Wave  
Storage Temperature Range  
-55 to +150  
-55 to +150  
C
°
Tstg  
TJ  
Operating Junction Temperature  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
8.33  
15  
W
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Lead  
RθJA  
RθJL  
°C/W  
°C/W  
2.2  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Device  
Symbol  
Units  
Parameter  
16AT 16BT 16CT 16DT 16FT 16GT  
16HT  
16JT  
VF  
trr  
Forward Voltage @ 8.0A  
Reverse Recovery Time  
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A  
0.95  
35  
1.3  
1.5  
V
50  
ns  
IR  
Reverse Current @ rated VR  
TA = 25°C  
10  
500  
µA  
µA  
TA = 100°C  
CT  
Total Capacitance  
VR = 4.0. f = 1.0 MHz  
pF  
85  
60  
2001 Fairchild Semiconductor Corporation  
FEP16AT - FEP16JT, Rev. C  

与FEP16BTD相关器件

型号 品牌 获取价格 描述 数据表
FEP16BT-E3/45 VISHAY

获取价格

DIODE ARRAY GP 100V 16A TO220AB
FEP16BT-G SENSITRON

获取价格

Rectifier Diode, 1 Phase, 2 Element, 16A, 100V V(RRM), Silicon, TO-220AB, LEAD FREE, PLAST
FEP16BTHE3/45 VISHAY

获取价格

DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
FEP16BT-HE3/45 VISHAY

获取价格

DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
FEP16BTS RENESAS

获取价格

16.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers
FEP16CP EIC

获取价格

Dual Ultrafast Plastic Rectifiers
FEP16CT EIC

获取价格

Ultrafast Plastic Rectifiers
FEP16CT VISHAY

获取价格

FAST EFFICIENT PLASTIC RECTIFIER
FEP16CT FAIRCHILD

获取价格

16 Ampere Glass Passivated Super Fast Rectifiers
FEP16CT TAITRON

获取价格

16A Super Fast Recovery Rectifiers