Datasheet > FEP16BTA

FEP16BTA

更新时间： 2024-11-01 20:26:59

品牌	Logo	应用领域
安森美 - ONSEMI		局域网二极管
页数	文件大小	规格书
3页	80K
描述
16A Ultra Fast Recovery Rectifier, TO-220 3L, 1000-RAIL

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中文翻译

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技术参数
数据手册

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FEP16BTA 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
Reach Compliance Code：	compliant	Factory Lead Time：	1 week
风险等级：	5.8	Is Samacsys：	N
Base Number Matches：	1

FEP16BTA 数据手册

PIN 1

PIN 3

CASE

PIN 2

FEP16AT - FEP16JT

Positive CT

Features

PIN 1

PIN 3

CASE

PIN 2

• Low forward voltage drop.

• High surge current capacity.

• High current capability.

• High reliability.

Negative CT

Suffix "A"

PIN 1

PIN 3

TO-220AB

CASE

PIN 2

Doubler

Suffix "D"

• Average Forward Current Rating at 16A (8A per Diode).

Fast Rectifiers (Glass Passivated)

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Value

Symbol

Units

Parameter

16AT 16BT 16CT 16DT 16FT 16GT

16HT

16JT

V_RRM

I_F(AV)

I_FSM

Maximum Repetitive Reverse

Voltage

Average Rectified Forward Current,

100 150 200 300

400

500

600

.375 " lead length @ T = 100 C

Non-repetitive Peak Forward Surge

Current

200

8.3 ms Single Half-Sine-Wave

Storage Temperature Range

-55 to +150

T_stg

T_J

Operating Junction Temperature

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

8.33

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead

R_θJA

R_θJL

°C/W

2.2

Electrical Characteristics

T_A= 25°C unless otherwise noted

Device

Symbol

Units

Parameter

16AT 16BT 16CT 16DT 16FT 16GT

16HT

16JT

V_F

t_rr

Forward Voltage @ 8.0A

Reverse Recovery Time

I_F= 0.5 A, I_R= 1.0 A, I_RR= 0.25 A

0.95

1.3

1.5

I_R

Reverse Current @ rated V_R

T_A= 25°C

500

µA

T_A= 100°C

C_T

Total Capacitance

V_R= 4.0. f = 1.0 MHz

2001 Fairchild Semiconductor Corporation

FEP16AT - FEP16JT, Rev. C

12 3

中文翻译

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