Datasheet > FDZ202P_04

FDZ202P_04

更新时间： 2024-12-01 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	170K
描述
P-Channel 2.5V Specified PowerTrench BGA MOSFET

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FDZ202P_04 数据手册

January 2004

FDZ202P



P-Channel 2.5V Specified PowerTrench BGA MOSFET

General Description

Features

Combining Fairchild’s advanced 2.5V specified

PowerTrench process with state of the art BGA

packaging, the FDZ202P minimizes both PCB space

• –5.5 A, –20 V. R_DS(ON)= 45 mΩ @ V_GS= –4.5 V

_DS(ON)= 75 mΩ @ V_GS= –2.5 V

and R_DS(ON)

This BGA MOSFET embodies a

• Occupies only 5 mm²of PCB area: only 55% of the

breakthrough in packaging technology which enables

the device to combine excellent thermal transfer

characteristics, high current handling capability, ultra-

area of SSOT-6

• Ultra-thin package: less than 0.80 mm height when

low profile packaging, low gate charge, and low R_DS(ON)

mounted to PCB

Applications

• Outstanding thermal transfer characteristics:

4 times better than SSOT-6

• Battery management

• Load switch

• Ultra-low Q_gx R_DS(ON)figure-of-merit

• Battery protection

• High power and current handling capability

Pin 1

Bottom

Top

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–20

±12

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

I_D

(Note 1a)

–5.5

–20

P_D

T_J, T_STG

Power Dissipation (Steady State)

Operating and Storage Junction Temperature Range

°C

–55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

0.7

R_θJA

R_θJB

R_θJC

°C/W

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

202P

FDZ202P

7’’

8mm

3000 units

FDZ202P Rev. D2 (W)

2004 Fairchild Semiconductor Corporation

12 3 4 5 6

中文翻译

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