FDV303

更新时间： 2024-09-15 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	68K
描述
Digital FET, N-Channel

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FDV303 数据手册

August 1997

FDV303N

Digital FET, N-Channel

General Description

Features

25 V, 0.68 A continuous, 2 A Peak.

These N-Channel enhancement mode field effect transistors are

produced using Fairchild's proprietary, high cell density, DMOS

technology. This very high density process is tailored to minimize

on-state resistance at low gate drive conditions. This device is

designed especially for application in battery circuits using either

one lithium or three cadmium or NMH cells. It can be used as an

inverter or for high-efficiency miniature discrete DC/DC

conversion in compact portable electronic devices like cellular

phones and pagers. This device has excellent on-state

resistance even at gate drive voltages as low as 2.5 volts.

R_DS(ON)= 0.45 W @ V_GS= 4.5 V

R_DS(ON)= 0.6 W @ V_GS= 2.7 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V_GS(th)< 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

Alternative to TN0200T and TN0201T.

SuperSOT^TM-8

SuperSOT^TM-6

SOT-23

SO-8

SOIC-16

SOT-223

Mark:303

Absolute Maximum Ratings T_A= 25^oC unless other wise noted

Symbol Parameter

FDV303N

Units

Drain-Source Voltage, Power Supply Voltage

Gate-Source Voltage, V_IN

V_DSS

V_GSS

I_D

Drain/Output Current

- Continuous

- Pulsed

0.68

Maximum Power Dissipation

0.35

°C

P_D

Operating and Storage Temperature Range

-55 to 150

6.0

T_J,T_STG

ESD

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

357

°C/W

R_q_JA

FDV303N Rev.D1

12 3 4

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与FDV303相关器件

型号	品牌	获取价格	描述	数据表
FDV303N	FAIRCHILD	获取价格	Digital FET, N-Channel
FDV303N	TYSEMI	获取价格	SOT-23
FDV303N	ONSEMI	获取价格	N 沟道，数字 FET，25V，0.68A，0.45Ω
FDV303N	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:25V;持续漏极电流（Id）（在25°C时
FDV303N (KDV303N)	KEXIN	获取价格	N-Channel MOSFET
FDV303ND87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
FDV303N-F169	ONSEMI	获取价格	N 沟道，数字 FET，25V，0.68A，0.45Ω
FDV303NL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
FDV303NS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
FDV304	FAIRCHILD	获取价格	Digital FET, P-Channel